Direct measurement of the spin polarization of the magnetic semiconductor (Ga,Mn)As

J. G. Braden; J. S. Parker; P. Xiong; S. H. Chun; Nitin Samarth

Direct measurement of the spin polarization of the magnetic semiconductor (Ga,Mn)As

J. G. Braden
, J. S. Parker
, P. Xiong
, S. H. Chun
, Nitin Samarth

Physics

Research output: Contribution to journal › Article › peer-review

126 Scopus citations

Abstract

Direct measurement of the spin polarization (P) of the magnetic semiconductor Ga_1-xMn_xAs was carried out using Andreev reflection spectroscopy. The conductance spectra of high transparency junction showed an intrinsic value for P greater than 85%. Results showed an extreme sensitivity of the measured spin polarization to the nature and quality of the interface for the material.

Original language	English (US)
Pages (from-to)	566021-566024
Number of pages	4
Journal	Physical Review Letters
Volume	91
Issue number	5
State	Published - Aug 1 2003

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Cite this

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title = "Direct measurement of the spin polarization of the magnetic semiconductor (Ga,Mn)As",

abstract = "Direct measurement of the spin polarization (P) of the magnetic semiconductor Ga1-xMnxAs was carried out using Andreev reflection spectroscopy. The conductance spectra of high transparency junction showed an intrinsic value for P greater than 85\%. Results showed an extreme sensitivity of the measured spin polarization to the nature and quality of the interface for the material.",

author = "Braden, \{J. G.\} and Parker, \{J. S.\} and P. Xiong and Chun, \{S. H.\} and Nitin Samarth",

year = "2003",

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language = "English (US)",

volume = "91",

pages = "566021--566024",

journal = "Physical Review Letters",

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T1 - Direct measurement of the spin polarization of the magnetic semiconductor (Ga,Mn)As

AU - Braden, J. G.

AU - Parker, J. S.

AU - Xiong, P.

AU - Chun, S. H.

AU - Samarth, Nitin

PY - 2003/8/1

Y1 - 2003/8/1

N2 - Direct measurement of the spin polarization (P) of the magnetic semiconductor Ga1-xMnxAs was carried out using Andreev reflection spectroscopy. The conductance spectra of high transparency junction showed an intrinsic value for P greater than 85%. Results showed an extreme sensitivity of the measured spin polarization to the nature and quality of the interface for the material.

AB - Direct measurement of the spin polarization (P) of the magnetic semiconductor Ga1-xMnxAs was carried out using Andreev reflection spectroscopy. The conductance spectra of high transparency junction showed an intrinsic value for P greater than 85%. Results showed an extreme sensitivity of the measured spin polarization to the nature and quality of the interface for the material.

UR - https://www.scopus.com/pages/publications/0042418463

UR - https://www.scopus.com/pages/publications/0042418463#tab=citedBy

M3 - Article

AN - SCOPUS:0042418463

SN - 0031-9007

VL - 91

SP - 566021

EP - 566024

JO - Physical Review Letters

JF - Physical Review Letters

IS - 5

ER -

Direct measurement of the spin polarization of the magnetic semiconductor (Ga,Mn)As

Abstract

All Science Journal Classification (ASJC) codes

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