Abstract
Domain wall motion was directly observed at temperatures near to the monoclinic-to-tetragonal phase transition temperature (TM-T) in [001]-oriented 0.23Pb(In1/2Nb1/2)O3-0. 42Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 (0.23PIN-0.42PMN-0.35PT) single crystals using a polarizing light microscope, and evident 90°and 180°domain switches were observed near the Curie temperature (TC). Two dielectric loss anomalies were observed at temperatures near TM-T in the [001]-oriented PIN-PMN-PT single crystals, while an additional dielectric loss peak was found at temperatures a few degrees below TC, which was associated with domain wall motion. Based on the domain structure observations, a domain switching mechanism was proposed to explain the novel dielectric loss peak at several degrees below TC.
Original language | English (US) |
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Pages (from-to) | 6292-6296 |
Number of pages | 5 |
Journal | CrystEngComm |
Volume | 15 |
Issue number | 32 |
DOIs | |
State | Published - 2013 |
All Science Journal Classification (ASJC) codes
- General Chemistry
- General Materials Science
- Condensed Matter Physics