Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based MOSFETs

J. T. Ryan; P. M. Lenahan

doi:10.1109/IRWS.2007.4469232

Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO₂ based MOSFETs

J. T. Ryan, P. M. Lenahan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Recent studies have demonstrated that deep level defects very near the Si/dielectric boundary are important reliability problems in HfO₂ based devices. In this study, we provide a partial identification of the chemical and structural nature of an electrically active center which is present in the interfacial layer of HfO₂ based devices. The defect almost certainly involves an oxygen deficient silicon which is weakly coupled to a nearby hafnium atom.

Original language	English (US)
Title of host publication	2007 IEEE International Integrated Reliability Workshop Final Report, IRW
Pages	107-110
Number of pages	4
DOIs	https://doi.org/10.1109/IRWS.2007.4469232
State	Published - 2007
Event	2007 IEEE International Integrated Reliability Workshop, IRW - S. Lake Tahoe, CA, United States Duration: Oct 15 2007 → Oct 18 2007

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report

Other

Other	2007 IEEE International Integrated Reliability Workshop, IRW
Country/Territory	United States
City	S. Lake Tahoe, CA
Period	10/15/07 → 10/18/07

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1109/IRWS.2007.4469232

Cite this

Ryan, J. T., & Lenahan, P. M. (2007). Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO₂ based MOSFETs. In 2007 IEEE International Integrated Reliability Workshop Final Report, IRW (pp. 107-110). Article 4469232 (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IRWS.2007.4469232

@inproceedings{94ba84606f4b45ac93c612037effd994,

title = "Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based MOSFETs",

abstract = "Recent studies have demonstrated that deep level defects very near the Si/dielectric boundary are important reliability problems in HfO2 based devices. In this study, we provide a partial identification of the chemical and structural nature of an electrically active center which is present in the interfacial layer of HfO2 based devices. The defect almost certainly involves an oxygen deficient silicon which is weakly coupled to a nearby hafnium atom.",

author = "Ryan, {J. T.} and Lenahan, {P. M.}",

year = "2007",

doi = "10.1109/IRWS.2007.4469232",

language = "English (US)",

isbn = "1424411726",

series = "IEEE International Integrated Reliability Workshop Final Report",

pages = "107--110",

booktitle = "2007 IEEE International Integrated Reliability Workshop Final Report, IRW",

note = "2007 IEEE International Integrated Reliability Workshop, IRW ; Conference date: 15-10-2007 Through 18-10-2007",

}

Ryan, JT & Lenahan, PM 2007, Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO₂ based MOSFETs. in 2007 IEEE International Integrated Reliability Workshop Final Report, IRW., 4469232, IEEE International Integrated Reliability Workshop Final Report, pp. 107-110, 2007 IEEE International Integrated Reliability Workshop, IRW, S. Lake Tahoe, CA, United States, 10/15/07. https://doi.org/10.1109/IRWS.2007.4469232

Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO₂ based MOSFETs. / Ryan, J. T.; Lenahan, P. M.
2007 IEEE International Integrated Reliability Workshop Final Report, IRW. 2007. p. 107-110 4469232 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based MOSFETs

AU - Ryan, J. T.

AU - Lenahan, P. M.

PY - 2007

Y1 - 2007

N2 - Recent studies have demonstrated that deep level defects very near the Si/dielectric boundary are important reliability problems in HfO2 based devices. In this study, we provide a partial identification of the chemical and structural nature of an electrically active center which is present in the interfacial layer of HfO2 based devices. The defect almost certainly involves an oxygen deficient silicon which is weakly coupled to a nearby hafnium atom.

AB - Recent studies have demonstrated that deep level defects very near the Si/dielectric boundary are important reliability problems in HfO2 based devices. In this study, we provide a partial identification of the chemical and structural nature of an electrically active center which is present in the interfacial layer of HfO2 based devices. The defect almost certainly involves an oxygen deficient silicon which is weakly coupled to a nearby hafnium atom.

UR - http://www.scopus.com/inward/record.url?scp=49549122185&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49549122185&partnerID=8YFLogxK

U2 - 10.1109/IRWS.2007.4469232

DO - 10.1109/IRWS.2007.4469232

M3 - Conference contribution

AN - SCOPUS:49549122185

SN - 1424411726

SN - 9781424411726

T3 - IEEE International Integrated Reliability Workshop Final Report

SP - 107

EP - 110

BT - 2007 IEEE International Integrated Reliability Workshop Final Report, IRW

T2 - 2007 IEEE International Integrated Reliability Workshop, IRW

Y2 - 15 October 2007 through 18 October 2007

ER -