Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO₂ based metal-oxide-silicon field-effect transistors

Keyphrases

• Threshold Voltage Instability 100%
• HfO2 100%
• Dangling Bond Defect 50%
• Amorphous Matrix 50%
• Oxygen Deficiency 50%
• Spin-lattice Relaxation 50%
• Electron Spin Resonance Spectra 50%
• Amphoteric Defect 50%
• Orientation Dependence 50%

Material Science

• Silicon 100%
• Field Effect Transistor 100%
• Metal Oxide 100%
• Oxide Compound 50%
• Transistor 50%
• Amorphous Material 50%
• Electron Paramagnetic Resonance Spectroscopy 50%