Abstract
Using a modified electron spin resonance technique known as spin-dependent recombination, we have found that channel hot hole injection in n channel metal oxide silicon (MOS) transistors creates the trivalent silicon dangling bond defect known as the Pbo center. This letter reports the first direct identification of the atomic structure of interfacial point defects created by channel hot carrier stressing in MOS transistors.
Original language | English (US) |
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Pages (from-to) | 3437-3439 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 59 |
Issue number | 26 |
DOIs | |
State | Published - 1991 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)