Direct observation of lifetime killing defects in 4H SiC epitaxial layers via spin dependent recombination in transistors

C. J. Cochrane; P. M. Lenahan; A. J. Lelis

doi:10.4028/www.scientific.net/MSF.615-617.299

Direct observation of lifetime killing defects in 4H SiC epitaxial layers via spin dependent recombination in transistors

C. J. Cochrane, P. M. Lenahan, A. J. Lelis

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have identified a magnetic resonance spectrum associated with minority carrier lifetime killing defects in device quality 4H SiC.

Original language	English (US)
Title of host publication	Silicon Carbide and Related Materials 2008
Subtitle of host publication	ECSCRM 2008
Publisher	Trans Tech Publications Ltd
Pages	299-302
Number of pages	4
ISBN (Print)	9780878493340
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.615-617.299
State	Published - 2009

Publication series

Name	Materials Science Forum
Volume	615 617
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.4028/www.scientific.net/MSF.615-617.299

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Cochrane, C. J., Lenahan, P. M., & Lelis, A. J. (2009). Direct observation of lifetime killing defects in 4H SiC epitaxial layers via spin dependent recombination in transistors. In Silicon Carbide and Related Materials 2008: ECSCRM 2008 (pp. 299-302). (Materials Science Forum; Vol. 615 617). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.615-617.299

@inproceedings{a3aa2a6ea95b4d098ebc53ca8f1a6f7c,

title = "Direct observation of lifetime killing defects in 4H SiC epitaxial layers via spin dependent recombination in transistors",

abstract = "We have identified a magnetic resonance spectrum associated with minority carrier lifetime killing defects in device quality 4H SiC.",

author = "Cochrane, {C. J.} and Lenahan, {P. M.} and Lelis, {A. J.}",

year = "2009",

doi = "10.4028/www.scientific.net/MSF.615-617.299",

language = "English (US)",

isbn = "9780878493340",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "299--302",

booktitle = "Silicon Carbide and Related Materials 2008",

}

Direct observation of lifetime killing defects in 4H SiC epitaxial layers via spin dependent recombination in transistors. / Cochrane, C. J.; Lenahan, P. M.; Lelis, A. J.
Silicon Carbide and Related Materials 2008: ECSCRM 2008. Trans Tech Publications Ltd, 2009. p. 299-302 (Materials Science Forum; Vol. 615 617).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Direct observation of lifetime killing defects in 4H SiC epitaxial layers via spin dependent recombination in transistors

AU - Cochrane, C. J.

AU - Lenahan, P. M.

AU - Lelis, A. J.

PY - 2009

Y1 - 2009

N2 - We have identified a magnetic resonance spectrum associated with minority carrier lifetime killing defects in device quality 4H SiC.

AB - We have identified a magnetic resonance spectrum associated with minority carrier lifetime killing defects in device quality 4H SiC.

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DO - 10.4028/www.scientific.net/MSF.615-617.299

M3 - Conference contribution

AN - SCOPUS:79251591334

SN - 9780878493340

T3 - Materials Science Forum

SP - 299

EP - 302

BT - Silicon Carbide and Related Materials 2008

PB - Trans Tech Publications Ltd

ER -

Direct observation of lifetime killing defects in 4H SiC epitaxial layers via spin dependent recombination in transistors

Abstract

Publication series

All Science Journal Classification (ASJC) codes

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