Direct sub-100-nm patterning of an organic low-k dielectric for electrical and optical interconnects

Jeffrey M. Catchmark; Guy P. Lavallee; Michael Rogosky; Youngchul Lee

doi:10.1007/s11664-005-0221-3

Direct sub-100-nm patterning of an organic low-k dielectric for electrical and optical interconnects

Jeffrey M. Catchmark, Guy P. Lavallee, Michael Rogosky, Youngchul Lee

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Low-k dielectric materials compatible with copper interconnect fabrication processes extending to the sub-50-nm technology nodes are desired for high speed integrated circuit (IC) fabrication. We demonstrate that bisbenzocyclobutene (BCB), an organic low-k dielectric material, can be patterned with sub-100-nm resolution using electron beam lithography, providing new avenues for nanoscale electrical and optical interconnect fabrication.

Original language	English (US)
Pages (from-to)	L12-L15
Journal	Journal of Electronic Materials
Volume	34
Issue number	3
DOIs	https://doi.org/10.1007/s11664-005-0221-3
State	Published - Mar 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-005-0221-3

Cite this

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title = "Direct sub-100-nm patterning of an organic low-k dielectric for electrical and optical interconnects",

abstract = "Low-k dielectric materials compatible with copper interconnect fabrication processes extending to the sub-50-nm technology nodes are desired for high speed integrated circuit (IC) fabrication. We demonstrate that bisbenzocyclobutene (BCB), an organic low-k dielectric material, can be patterned with sub-100-nm resolution using electron beam lithography, providing new avenues for nanoscale electrical and optical interconnect fabrication.",

author = "Catchmark, {Jeffrey M.} and Lavallee, {Guy P.} and Michael Rogosky and Youngchul Lee",

year = "2005",

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AU - Catchmark, Jeffrey M.

AU - Lavallee, Guy P.

AU - Rogosky, Michael

AU - Lee, Youngchul

PY - 2005/3

Y1 - 2005/3

N2 - Low-k dielectric materials compatible with copper interconnect fabrication processes extending to the sub-50-nm technology nodes are desired for high speed integrated circuit (IC) fabrication. We demonstrate that bisbenzocyclobutene (BCB), an organic low-k dielectric material, can be patterned with sub-100-nm resolution using electron beam lithography, providing new avenues for nanoscale electrical and optical interconnect fabrication.

AB - Low-k dielectric materials compatible with copper interconnect fabrication processes extending to the sub-50-nm technology nodes are desired for high speed integrated circuit (IC) fabrication. We demonstrate that bisbenzocyclobutene (BCB), an organic low-k dielectric material, can be patterned with sub-100-nm resolution using electron beam lithography, providing new avenues for nanoscale electrical and optical interconnect fabrication.

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Direct sub-100-nm patterning of an organic low-k dielectric for electrical and optical interconnects

Abstract

All Science Journal Classification (ASJC) codes

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