Directly lithographic top contacts for pentacene organic thin-film transistors

Chung Chen Kuo; Thomas Nelson Jackson

doi:10.1109/DRC.2004.1367795

Directly lithographic top contacts for pentacene organic thin-film transistors

Chung Chen Kuo, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

The fabrication of lithographic source/drain top contacts of pentacene organic thin-film transistors (OTFT) with mobility greater than 0.3 cm ²/V-s, was investigated. A tetra-layer lithographic process using polyvinyl alcohol (PVA) with medium molecular weight, polymethyl methacrylate (PMMA), PVA with ammonium dichromate (ADC), and diluted ma N-440 negative resist to fabricate top contacts on OTFT's by lift-off. It is observed that some structural damages are common and the deviation of I-V characteristics implies a uniformity issue and some PVA residue from the PVA development. The results show that lithographic top contacts on pentacene OTFTs exhibits acceptable performance for electronic applications.

Original language	English (US)
Title of host publication	Device Research Conference - Conference Digest, 62nd DRC
Pages	85-86
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2004.1367795
State	Published - 2004
Event	Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States Duration: Jun 21 2004 → Jun 23 2004

Other

Other	Device Research Conference - Conference Digest, 62nd DRC
Country/Territory	United States
City	Notre Dame, IN
Period	6/21/04 → 6/23/04

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1109/DRC.2004.1367795

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title = "Directly lithographic top contacts for pentacene organic thin-film transistors",

abstract = "The fabrication of lithographic source/drain top contacts of pentacene organic thin-film transistors (OTFT) with mobility greater than 0.3 cm 2/V-s, was investigated. A tetra-layer lithographic process using polyvinyl alcohol (PVA) with medium molecular weight, polymethyl methacrylate (PMMA), PVA with ammonium dichromate (ADC), and diluted ma N-440 negative resist to fabricate top contacts on OTFT's by lift-off. It is observed that some structural damages are common and the deviation of I-V characteristics implies a uniformity issue and some PVA residue from the PVA development. The results show that lithographic top contacts on pentacene OTFTs exhibits acceptable performance for electronic applications.",

author = "Kuo, {Chung Chen} and Jackson, {Thomas Nelson}",

year = "2004",

doi = "10.1109/DRC.2004.1367795",

language = "English (US)",

isbn = "0780382846",

pages = "85--86",

booktitle = "Device Research Conference - Conference Digest, 62nd DRC",

note = "Device Research Conference - Conference Digest, 62nd DRC ; Conference date: 21-06-2004 Through 23-06-2004",

}

TY - GEN

T1 - Directly lithographic top contacts for pentacene organic thin-film transistors

AU - Kuo, Chung Chen

AU - Jackson, Thomas Nelson

PY - 2004

Y1 - 2004

N2 - The fabrication of lithographic source/drain top contacts of pentacene organic thin-film transistors (OTFT) with mobility greater than 0.3 cm 2/V-s, was investigated. A tetra-layer lithographic process using polyvinyl alcohol (PVA) with medium molecular weight, polymethyl methacrylate (PMMA), PVA with ammonium dichromate (ADC), and diluted ma N-440 negative resist to fabricate top contacts on OTFT's by lift-off. It is observed that some structural damages are common and the deviation of I-V characteristics implies a uniformity issue and some PVA residue from the PVA development. The results show that lithographic top contacts on pentacene OTFTs exhibits acceptable performance for electronic applications.

AB - The fabrication of lithographic source/drain top contacts of pentacene organic thin-film transistors (OTFT) with mobility greater than 0.3 cm 2/V-s, was investigated. A tetra-layer lithographic process using polyvinyl alcohol (PVA) with medium molecular weight, polymethyl methacrylate (PMMA), PVA with ammonium dichromate (ADC), and diluted ma N-440 negative resist to fabricate top contacts on OTFT's by lift-off. It is observed that some structural damages are common and the deviation of I-V characteristics implies a uniformity issue and some PVA residue from the PVA development. The results show that lithographic top contacts on pentacene OTFTs exhibits acceptable performance for electronic applications.

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U2 - 10.1109/DRC.2004.1367795

DO - 10.1109/DRC.2004.1367795

M3 - Conference contribution

AN - SCOPUS:18044373215

SN - 0780382846

SP - 85

EP - 86

BT - Device Research Conference - Conference Digest, 62nd DRC

T2 - Device Research Conference - Conference Digest, 62nd DRC

Y2 - 21 June 2004 through 23 June 2004

ER -

Directly lithographic top contacts for pentacene organic thin-film transistors

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