TY - GEN
T1 - Directly lithographic top contacts for pentacene organic thin-film transistors
AU - Kuo, Chung Chen
AU - Jackson, Thomas Nelson
PY - 2004
Y1 - 2004
N2 - The fabrication of lithographic source/drain top contacts of pentacene organic thin-film transistors (OTFT) with mobility greater than 0.3 cm 2/V-s, was investigated. A tetra-layer lithographic process using polyvinyl alcohol (PVA) with medium molecular weight, polymethyl methacrylate (PMMA), PVA with ammonium dichromate (ADC), and diluted ma N-440 negative resist to fabricate top contacts on OTFT's by lift-off. It is observed that some structural damages are common and the deviation of I-V characteristics implies a uniformity issue and some PVA residue from the PVA development. The results show that lithographic top contacts on pentacene OTFTs exhibits acceptable performance for electronic applications.
AB - The fabrication of lithographic source/drain top contacts of pentacene organic thin-film transistors (OTFT) with mobility greater than 0.3 cm 2/V-s, was investigated. A tetra-layer lithographic process using polyvinyl alcohol (PVA) with medium molecular weight, polymethyl methacrylate (PMMA), PVA with ammonium dichromate (ADC), and diluted ma N-440 negative resist to fabricate top contacts on OTFT's by lift-off. It is observed that some structural damages are common and the deviation of I-V characteristics implies a uniformity issue and some PVA residue from the PVA development. The results show that lithographic top contacts on pentacene OTFTs exhibits acceptable performance for electronic applications.
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U2 - 10.1109/DRC.2004.1367795
DO - 10.1109/DRC.2004.1367795
M3 - Conference contribution
AN - SCOPUS:18044373215
SN - 0780382846
T3 - Device Research Conference - Conference Digest, DRC
SP - 85
EP - 86
BT - Device Research Conference - Conference Digest, 62nd DRC
T2 - Device Research Conference - Conference Digest, 62nd DRC
Y2 - 21 June 2004 through 23 June 2004
ER -