Dislocation reduction in AlGaN/GaN heterostructures on 4H-SiC by molecular beam epitaxy in the thermal decomposition regime

Keyphrases

• Thermal Decomposition 100%
• Molecular Beam Epitaxy 100%
• Surface Morphology 100%
• 4H-SiC 100%
• Dislocation Reduction 100%
• AlGaN/GaN Heterostructure 100%
• Growth Conditions 50%
• Growth Temperature 50%
• Growth Characteristics 50%
• Power Output 50%
• Homoepitaxial 50%
• Transistor Structure 50%
• N-rich 50%
• High Growth 50%
• Drain Bias 50%
• Heteroepitaxial Growth 50%
• Self-recovery 50%
• Plasma-assisted Molecular Beam Epitaxy 50%
• GaN Buffer 50%
• Power Added Efficiency 50%
• High Electron Mobility Transistor 50%
• Threading Dislocations 50%

Engineering

• Heterostructures 100%
• Surface Morphology 100%
• Growth Condition 50%
• Growth Temperature 50%
• Output Power 50%
• Rich Condition 50%
• Drain Bias 50%
• Threading Dislocation 50%
• Power Added Efficiency 50%
• Transistor 50%

Material Science

• Molecular Beam Epitaxy 100%
• Heterojunction 100%
• Surface Morphology 100%
• Transistor 50%
• Electron Mobility 50%