Keyphrases
Thermal Decomposition
100%
Molecular Beam Epitaxy
100%
Surface Morphology
100%
4H-SiC
100%
GaN Heterostructure
100%
Growth Conditions
50%
Growth Temperature
50%
High Electron Mobility Transistor
50%
Growth Characteristics
50%
Power Output
50%
Homoepitaxial
50%
Threading Dislocation
50%
Transistor Structure
50%
N-rich
50%
High Growth
50%
Drain Bias
50%
Heteroepitaxial Growth
50%
Self-recovery
50%
4H-SiC Substrates
50%
Plasma-assisted Molecular Beam Epitaxy
50%
GaN Buffer
50%
Power Added Efficiency
50%
Engineering
Heterostructures
100%
Surface Morphology
100%
Growth Condition
50%
Growth Temperature
50%
Output Power
50%
Rich Condition
50%
Drain Bias
50%
Threading Dislocation
50%
Power Added Efficiency
50%
Material Science
Molecular Beam Epitaxy
100%
Heterojunction
100%
Surface Morphology
100%
Transistor
50%
Electron Mobility
50%
Earth and Planetary Sciences
Pyrolysis
100%
High Electron Mobility Transistors
50%
Physics
Thermal Decomposition
100%
High Electron Mobility Transistors
50%