Disorder dominated microwave conductance spectra of doped silicon nanowire arrays

Clark Highstrete; Mark Lee; Aaron L. Vallett; Sarah M. Eichfeld; Joan M. Redwing; Theresa S. Mayer

doi:10.1021/nl072496p

Disorder dominated microwave conductance spectra of doped silicon nanowire arrays

Clark Highstrete, Mark Lee, Aaron L. Vallett, Sarah M. Eichfeld, Joan M. Redwing, Theresa S. Mayer

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Conductance spectra of doped silicon nanowire (SiNW) arrays were measured from 0.5 to 50 GHz at temperatures between 4 and 293 K. For arrays consisting of 11 to >10 ⁴ SiNWs, the conductance was found to increase with frequency as f ^s, with 0.25 < s < 0.45, consistent with behavior found universally in disordered systems. A possible cause is disorder from Si/SiO _x interface states dominating the conductance due to the high surface-to-volume ratio of the nanowires.

Original language	English (US)
Pages (from-to)	1557-1561
Number of pages	5
Journal	Nano letters
Volume	8
Issue number	6
DOIs	https://doi.org/10.1021/nl072496p
State	Published - Jun 2008

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl072496p

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abstract = "Conductance spectra of doped silicon nanowire (SiNW) arrays were measured from 0.5 to 50 GHz at temperatures between 4 and 293 K. For arrays consisting of 11 to >10 4 SiNWs, the conductance was found to increase with frequency as f s, with 0.25 < s < 0.45, consistent with behavior found universally in disordered systems. A possible cause is disorder from Si/SiO x interface states dominating the conductance due to the high surface-to-volume ratio of the nanowires.",

author = "Clark Highstrete and Mark Lee and Vallett, {Aaron L.} and Eichfeld, {Sarah M.} and Redwing, {Joan M.} and Mayer, {Theresa S.}",

year = "2008",

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T1 - Disorder dominated microwave conductance spectra of doped silicon nanowire arrays

AU - Highstrete, Clark

AU - Lee, Mark

AU - Vallett, Aaron L.

AU - Eichfeld, Sarah M.

AU - Redwing, Joan M.

AU - Mayer, Theresa S.

PY - 2008/6

Y1 - 2008/6

N2 - Conductance spectra of doped silicon nanowire (SiNW) arrays were measured from 0.5 to 50 GHz at temperatures between 4 and 293 K. For arrays consisting of 11 to >10 4 SiNWs, the conductance was found to increase with frequency as f s, with 0.25 < s < 0.45, consistent with behavior found universally in disordered systems. A possible cause is disorder from Si/SiO x interface states dominating the conductance due to the high surface-to-volume ratio of the nanowires.

AB - Conductance spectra of doped silicon nanowire (SiNW) arrays were measured from 0.5 to 50 GHz at temperatures between 4 and 293 K. For arrays consisting of 11 to >10 4 SiNWs, the conductance was found to increase with frequency as f s, with 0.25 < s < 0.45, consistent with behavior found universally in disordered systems. A possible cause is disorder from Si/SiO x interface states dominating the conductance due to the high surface-to-volume ratio of the nanowires.

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JO - Nano letters

JF - Nano letters

IS - 6

ER -

Disorder dominated microwave conductance spectra of doped silicon nanowire arrays

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