TY - JOUR
T1 - Distribution of the energy levels of individual interface traps and a fundamental refinement in charge pumping theory
AU - Tsuchiya, Toshiaki
AU - Lenahan, Patrick M.
N1 - Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/3
Y1 - 2017/3
N2 - We carried out a unique and systematic characterization of single amphoteric Si/SiO2 interface traps using the charge pumping (CP) method. As a result, we obtained the distribution of the energy levels of these traps for the first time. The distribution is reasonably similar to that of the Pb0 density of states reported previously. By considering the essential nature of these traps (i.e., those with two energy levels), factors depending on the energy levels, and the Coulomb interactions between traps, we fundamentally corrected the conventional CP theory.
AB - We carried out a unique and systematic characterization of single amphoteric Si/SiO2 interface traps using the charge pumping (CP) method. As a result, we obtained the distribution of the energy levels of these traps for the first time. The distribution is reasonably similar to that of the Pb0 density of states reported previously. By considering the essential nature of these traps (i.e., those with two energy levels), factors depending on the energy levels, and the Coulomb interactions between traps, we fundamentally corrected the conventional CP theory.
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U2 - 10.7567/JJAP.56.031301
DO - 10.7567/JJAP.56.031301
M3 - Article
AN - SCOPUS:85014343283
SN - 0021-4922
VL - 56
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 3
M1 - 031301
ER -