Abstract
Measurements of loss factor and capacitance made on single crystals of P-doped n-type silicon are reported. Samples are irradiated with (1.00 ± 0.20) MeV electrons at temperatures <12K. The production of divacancies in the irradiated samples is monitored using hopping conductivity changes at 4.2 K. Higher divacancy production is observed in Czochralski-grown samples and samples containing appreciable concentrations of group III impurities. This suggests that oxygen and group III impurities trap the self interstitials, mobile under irradiation conditions, thus, inhibiting divacancy-self-interstitials annihilation. Effects of irradiation on the free carriers conductivity of the samples are also investigated.
Original language | English (US) |
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Pages (from-to) | 312-318 |
Number of pages | 7 |
Journal | Physica B+C |
Volume | 150 |
Issue number | 3 |
DOIs | |
State | Published - Jun 1988 |
All Science Journal Classification (ASJC) codes
- General Engineering