Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 "hyperfine spectrum"

Tetsuya D. Mishima; Patrick M. Lenahan; Werner Weber

doi:10.1063/1.126776

Do P_b1 centers have levels in the Si band gap? Spin-dependent recombination study of the P_b1 "hyperfine spectrum"

Tetsuya D. Mishima
, Patrick M. Lenahan
, Werner Weber

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

The electronic properties of the (001) Si/SiO₂ P_b1 defect are the subject of considerable controversy. We present spin-dependent recombination results which indicate most strongly that the P_b1 centers have levels in the Si band gap. Our results suggest that the P_b1 correlation energy is smaller than that of the more widely studied (001) Si/SiO₂ defect called P_b0.

Original language	English (US)
Pages (from-to)	3771-3773
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	25
DOIs	https://doi.org/10.1063/1.126776
State	Published - Jun 19 2000

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.126776

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title = "Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 {"}hyperfine spectrum{"}",

abstract = "The electronic properties of the (001) Si/SiO2 Pb1 defect are the subject of considerable controversy. We present spin-dependent recombination results which indicate most strongly that the Pb1 centers have levels in the Si band gap. Our results suggest that the Pb1 correlation energy is smaller than that of the more widely studied (001) Si/SiO2 defect called Pb0.",

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AU - Mishima, Tetsuya D.

AU - Lenahan, Patrick M.

AU - Weber, Werner

PY - 2000/6/19

Y1 - 2000/6/19

N2 - The electronic properties of the (001) Si/SiO2 Pb1 defect are the subject of considerable controversy. We present spin-dependent recombination results which indicate most strongly that the Pb1 centers have levels in the Si band gap. Our results suggest that the Pb1 correlation energy is smaller than that of the more widely studied (001) Si/SiO2 defect called Pb0.

AB - The electronic properties of the (001) Si/SiO2 Pb1 defect are the subject of considerable controversy. We present spin-dependent recombination results which indicate most strongly that the Pb1 centers have levels in the Si band gap. Our results suggest that the Pb1 correlation energy is smaller than that of the more widely studied (001) Si/SiO2 defect called Pb0.

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UR - https://www.scopus.com/pages/publications/0005127444#tab=citedBy

U2 - 10.1063/1.126776

DO - 10.1063/1.126776

M3 - Article

AN - SCOPUS:0005127444

SN - 0003-6951

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Do P_b1 centers have levels in the Si band gap? Spin-dependent recombination study of the P_b1 "hyperfine spectrum"

Abstract

All Science Journal Classification (ASJC) codes

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