Domain rearrangement in ferroelectric Bi4Ti3O12 thin films studied by in situ optical second harmonic generation

Yaniv Barad; James Lettieri; Chris D. Theis; Darrell G. Schlom; Venkatraman Gopalan

doi:10.1063/1.1402673

Domain rearrangement in ferroelectric Bi₄Ti₃O₁₂ thin films studied by in situ optical second harmonic generation

Yaniv Barad, James Lettieri, Chris D. Theis, Darrell G. Schlom, Venkatraman Gopalan

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12 Scopus citations

Abstract

Electric-field induced rearrangement of domain microstructure in an epitaxial thin film of Bi₄Ti₃O₁₂ on a SrTiO₃ (001) substrate is studied by optical second harmonic generation measurements. The input polarization dependence of the second harmonic signal exhibits spatial symmetries that reflect the presence of eight different domain variants present in the film. Changes in these symmetries with the application of electric field are experimentally studied at 23°C and 60°C, and theoretically modeled to extract the hysteresis loops that reflect quantitative changes in the fraction of domain variants. A strong correlation is observed between the dc electrical conductance (as distinct from transient currents) and the ferroelectric domain state of the film, which is proposed to arise from the creation and destruction of charged domain walls within the film with applied field.

Original language	English (US)
Pages (from-to)	3497-3503
Number of pages	7
Journal	Journal of Applied Physics
Volume	90
Issue number	7
DOIs	https://doi.org/10.1063/1.1402673
State	Published - Oct 1 2001

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.1402673

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title = "Domain rearrangement in ferroelectric Bi4Ti3O12 thin films studied by in situ optical second harmonic generation",

abstract = "Electric-field induced rearrangement of domain microstructure in an epitaxial thin film of Bi4Ti3O12 on a SrTiO3 (001) substrate is studied by optical second harmonic generation measurements. The input polarization dependence of the second harmonic signal exhibits spatial symmetries that reflect the presence of eight different domain variants present in the film. Changes in these symmetries with the application of electric field are experimentally studied at 23°C and 60°C, and theoretically modeled to extract the hysteresis loops that reflect quantitative changes in the fraction of domain variants. A strong correlation is observed between the dc electrical conductance (as distinct from transient currents) and the ferroelectric domain state of the film, which is proposed to arise from the creation and destruction of charged domain walls within the film with applied field.",

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T1 - Domain rearrangement in ferroelectric Bi4Ti3O12 thin films studied by in situ optical second harmonic generation

AU - Barad, Yaniv

AU - Lettieri, James

AU - Theis, Chris D.

AU - Schlom, Darrell G.

AU - Gopalan, Venkatraman

PY - 2001/10/1

Y1 - 2001/10/1

N2 - Electric-field induced rearrangement of domain microstructure in an epitaxial thin film of Bi4Ti3O12 on a SrTiO3 (001) substrate is studied by optical second harmonic generation measurements. The input polarization dependence of the second harmonic signal exhibits spatial symmetries that reflect the presence of eight different domain variants present in the film. Changes in these symmetries with the application of electric field are experimentally studied at 23°C and 60°C, and theoretically modeled to extract the hysteresis loops that reflect quantitative changes in the fraction of domain variants. A strong correlation is observed between the dc electrical conductance (as distinct from transient currents) and the ferroelectric domain state of the film, which is proposed to arise from the creation and destruction of charged domain walls within the film with applied field.

AB - Electric-field induced rearrangement of domain microstructure in an epitaxial thin film of Bi4Ti3O12 on a SrTiO3 (001) substrate is studied by optical second harmonic generation measurements. The input polarization dependence of the second harmonic signal exhibits spatial symmetries that reflect the presence of eight different domain variants present in the film. Changes in these symmetries with the application of electric field are experimentally studied at 23°C and 60°C, and theoretically modeled to extract the hysteresis loops that reflect quantitative changes in the fraction of domain variants. A strong correlation is observed between the dc electrical conductance (as distinct from transient currents) and the ferroelectric domain state of the film, which is proposed to arise from the creation and destruction of charged domain walls within the film with applied field.

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Domain rearrangement in ferroelectric Bi₄Ti₃O₁₂ thin films studied by in situ optical second harmonic generation

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