Doped semiconductors with band-edge plasma frequencies

Stephanie Law, Runyu Liu, Daniel Wasserman

Research output: Contribution to journalArticlepeer-review

61 Scopus citations


In this work, the authors demonstrate the potential of epitaxially grown highly doped InSb as an engineered, wavelength-flexible mid-IR plasmonic material. The authors achieve doping concentrations over an order of magnitude larger than previously published results and show that such materials have plasma frequencies corresponding to energies larger than the material's band-gap. These semiconductor-based plasmonic metals open the door to homoepitaxial integration of plasmonic or epsilon-near-zero materials with optoelectronic devices at mid-infrared wavelengths. The materials are characterized by Hall measurements, mid-infrared transmission and reflection spectroscopy, and near-infrared transmission spectroscopy. The opportunities offered and the limitations presented by this material system are discussed and analyzed.

Original languageEnglish (US)
Article number052601
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number5
StatePublished - Sep 2014

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Doped semiconductors with band-edge plasma frequencies'. Together they form a unique fingerprint.

Cite this