Doping effects of Sb and Pb in epitaxial topological insulator Bi 2 Se3 thin films: An in situ angle-resolved photoemission spectroscopy study

Yi Zhang; Cui Zu Chang; Ke He; Li Li Wang; Xi Chen; Jin Feng Jia; Xu Cun Ma; Qi Kun Xue

doi:10.1063/1.3516160

Doping effects of Sb and Pb in epitaxial topological insulator Bi ₂ Se₃ thin films: An in situ angle-resolved photoemission spectroscopy study

Yi Zhang, Cui Zu Chang, Ke He, Li Li Wang, Xi Chen, Jin Feng Jia, Xu Cun Ma, Qi Kun Xue

Physics

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49 Scopus citations

Abstract

Bi₂ Se₃ is a typical three-dimensional topological insulator but always exhibits metallic behavior due to heavy n-type doping. With in situ angle-resolved photoemission spectroscopy, we have systematically studied the doping effects of Sb and Pb on the electronic structure of Bi ₂ Se₃ films prepared by molecular beam epitaxy. The surface chemical potential of Bi₂ Se₃ can be tuned by 110 and 145 meV by doping Sb and Pb atoms, respectively. By codoping Pb and Sb, the Fermi level can be shifted from above to below the Dirac point. The underlying mechanism in different doping effects of Sb and Pb is discussed.

Original language	English (US)
Article number	194102
Journal	Applied Physics Letters
Volume	97
Issue number	19
DOIs	https://doi.org/10.1063/1.3516160
State	Published - Nov 8 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3516160

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title = "Doping effects of Sb and Pb in epitaxial topological insulator Bi 2 Se3 thin films: An in situ angle-resolved photoemission spectroscopy study",

abstract = "Bi2 Se3 is a typical three-dimensional topological insulator but always exhibits metallic behavior due to heavy n-type doping. With in situ angle-resolved photoemission spectroscopy, we have systematically studied the doping effects of Sb and Pb on the electronic structure of Bi 2 Se3 films prepared by molecular beam epitaxy. The surface chemical potential of Bi2 Se3 can be tuned by 110 and 145 meV by doping Sb and Pb atoms, respectively. By codoping Pb and Sb, the Fermi level can be shifted from above to below the Dirac point. The underlying mechanism in different doping effects of Sb and Pb is discussed.",

author = "Yi Zhang and Chang, {Cui Zu} and Ke He and Wang, {Li Li} and Xi Chen and Jia, {Jin Feng} and Ma, {Xu Cun} and Xue, {Qi Kun}",

note = "Funding Information: This work was supported by NSFC (Grant Nos. 10974237 and 10721404) and Ministry of Science and Technology of China (Grant No. 2009CB929400).",

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doi = "10.1063/1.3516160",

language = "English (US)",

volume = "97",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Doping effects of Sb and Pb in epitaxial topological insulator Bi 2 Se3 thin films

T2 - An in situ angle-resolved photoemission spectroscopy study

AU - Zhang, Yi

AU - Chang, Cui Zu

AU - He, Ke

AU - Wang, Li Li

AU - Chen, Xi

AU - Jia, Jin Feng

AU - Ma, Xu Cun

AU - Xue, Qi Kun

N1 - Funding Information: This work was supported by NSFC (Grant Nos. 10974237 and 10721404) and Ministry of Science and Technology of China (Grant No. 2009CB929400).

PY - 2010/11/8

Y1 - 2010/11/8

N2 - Bi2 Se3 is a typical three-dimensional topological insulator but always exhibits metallic behavior due to heavy n-type doping. With in situ angle-resolved photoemission spectroscopy, we have systematically studied the doping effects of Sb and Pb on the electronic structure of Bi 2 Se3 films prepared by molecular beam epitaxy. The surface chemical potential of Bi2 Se3 can be tuned by 110 and 145 meV by doping Sb and Pb atoms, respectively. By codoping Pb and Sb, the Fermi level can be shifted from above to below the Dirac point. The underlying mechanism in different doping effects of Sb and Pb is discussed.

AB - Bi2 Se3 is a typical three-dimensional topological insulator but always exhibits metallic behavior due to heavy n-type doping. With in situ angle-resolved photoemission spectroscopy, we have systematically studied the doping effects of Sb and Pb on the electronic structure of Bi 2 Se3 films prepared by molecular beam epitaxy. The surface chemical potential of Bi2 Se3 can be tuned by 110 and 145 meV by doping Sb and Pb atoms, respectively. By codoping Pb and Sb, the Fermi level can be shifted from above to below the Dirac point. The underlying mechanism in different doping effects of Sb and Pb is discussed.

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ER -

Doping effects of Sb and Pb in epitaxial topological insulator Bi ₂ Se₃ thin films: An in situ angle-resolved photoemission spectroscopy study

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