@inproceedings{54381d912ff74150874d6dc1a8ce17e7,
title = "Double-gate ZnO TFT active rectifier",
abstract = "Active rectifiers combine a high-gain amplifier (used as a comparator) and actively controlled switches to provide reduced turn-on voltage compared to p-n and Schottky diodes. Most reports of active rectifiers use silicon MOS transistor technology, however for some applications it is useful to combine active rectifiers with micro-electromechanical systems (MEMS) or to provide active rectifiers distributed over a large area. For such applications active rectifiers using thin film transistors (TFTs) are of interest. In this paper, we demonstrate a low-power full-wave active rectifier fabricated using double-gate ZnO TFTs. The double-gate TFT structure allows tuning of the device turn-on voltage and threshold voltage by biasing the top gate [1]. This simplifies fabrication of enhancement/depletion mode circuits and allows high gain inverter stages that operate at low power.",
author = "Sun, {Kaige G.} and Jackson, {Thomas Nelson}",
year = "2014",
month = jan,
day = "1",
doi = "10.1109/DRC.2014.6872401",
language = "English (US)",
isbn = "9781479954056",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "269--270",
booktitle = "72nd Device Research Conference, DRC 2014 - Conference Digest",
address = "United States",
note = "72nd Device Research Conference, DRC 2014 ; Conference date: 22-06-2014 Through 25-06-2014",
}