Double-gate ZnO TFT active rectifier

Kaige G. Sun, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Active rectifiers combine a high-gain amplifier (used as a comparator) and actively controlled switches to provide reduced turn-on voltage compared to p-n and Schottky diodes. Most reports of active rectifiers use silicon MOS transistor technology, however for some applications it is useful to combine active rectifiers with micro-electromechanical systems (MEMS) or to provide active rectifiers distributed over a large area. For such applications active rectifiers using thin film transistors (TFTs) are of interest. In this paper, we demonstrate a low-power full-wave active rectifier fabricated using double-gate ZnO TFTs. The double-gate TFT structure allows tuning of the device turn-on voltage and threshold voltage by biasing the top gate [1]. This simplifies fabrication of enhancement/depletion mode circuits and allows high gain inverter stages that operate at low power.

Original languageEnglish (US)
Title of host publication72nd Device Research Conference, DRC 2014 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Print)9781479954056
StatePublished - Jan 1 2014
Event72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
Duration: Jun 22 2014Jun 25 2014

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other72nd Device Research Conference, DRC 2014
Country/TerritoryUnited States
CitySanta Barbara, CA

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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