TY - JOUR
T1 - Downscaling of Non-Van der Waals Semimetallic W5N6 with Resistivity Preservation
AU - Gao, Hongze
AU - Zhou, Da
AU - Ping, Lu
AU - Wang, Zifan
AU - Hung, Nguyen Tuan
AU - Cao, Jun
AU - Geiwitz, Michael
AU - Natale, Gabriel
AU - Lin, Yuxuan Cosmi
AU - Burch, Kenneth Stephen
AU - Saito, Riichiro
AU - Terrones, Mauricio
AU - Ling, Xi
N1 - Publisher Copyright:
© 2025 American Chemical Society.
PY - 2025/1/28
Y1 - 2025/1/28
N2 - The bulk phase of transition metal nitrides (TMNs) has long been a subject of extensive investigation due to their utility as coating materials, electrocatalysts, and diffusion barriers, attributed to their high conductivity and refractory properties. Downscaling TMNs into two-dimensional (2D) forms would provide valuable members to the existing 2D materials repertoire, with potential enhancements across various applications. Moreover, calculations have anticipated the emergence of uncommon physical phenomena in TMNs at the 2D limit. In this study, we use the atomic substitution approach to synthesize 2D W5N6 with tunable thicknesses from tens of nanometers down to 2.9 nm. The obtained flakes exhibit high crystallinity and smooth surfaces. Electrical measurements on 15 samples show an average electrical conductivity of 161.1 S/cm, which persists while thickness decreases from 45.6 to 2.9 nm. The observed weak gate-tuning effect suggests the semimetallic nature of the synthesized 2D W5N6. Further investigation of the conversion mechanism elucidates the crucial role of chalcogen vacancies in the precursor for initiating the reaction and strain in propagating the conversion. Our work introduces a desired semimetallic crystal to the 2D material library with mechanistic insights for future design of the synthesis.
AB - The bulk phase of transition metal nitrides (TMNs) has long been a subject of extensive investigation due to their utility as coating materials, electrocatalysts, and diffusion barriers, attributed to their high conductivity and refractory properties. Downscaling TMNs into two-dimensional (2D) forms would provide valuable members to the existing 2D materials repertoire, with potential enhancements across various applications. Moreover, calculations have anticipated the emergence of uncommon physical phenomena in TMNs at the 2D limit. In this study, we use the atomic substitution approach to synthesize 2D W5N6 with tunable thicknesses from tens of nanometers down to 2.9 nm. The obtained flakes exhibit high crystallinity and smooth surfaces. Electrical measurements on 15 samples show an average electrical conductivity of 161.1 S/cm, which persists while thickness decreases from 45.6 to 2.9 nm. The observed weak gate-tuning effect suggests the semimetallic nature of the synthesized 2D W5N6. Further investigation of the conversion mechanism elucidates the crucial role of chalcogen vacancies in the precursor for initiating the reaction and strain in propagating the conversion. Our work introduces a desired semimetallic crystal to the 2D material library with mechanistic insights for future design of the synthesis.
UR - https://www.scopus.com/pages/publications/85216792461
UR - https://www.scopus.com/inward/citedby.url?scp=85216792461&partnerID=8YFLogxK
U2 - 10.1021/acsnano.4c12155
DO - 10.1021/acsnano.4c12155
M3 - Article
C2 - 39817314
AN - SCOPUS:85216792461
SN - 1936-0851
VL - 19
SP - 3362
EP - 3371
JO - ACS nano
JF - ACS nano
IS - 3
ER -