Droop mitigating last level cache architecture for STTRAM

Radha Krishna Aluru, Swaroop Ghosh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

Spin-Transfer Torque Random Access Memory (STTRAM) is one of the emerging Non-Volatile Memory (NVM) technologies especially preferred for the Last Level Cache (LLC). The amount of current needed to switch the magnetization is high (∼100ßA per bit). For a full cache line (512-bit) write, this extremely high current results in a voltage droop in the conventional cache architecture. Due to this droop, the write operation fails especially, when the farthest bank of the cache is accessed. In this paper, we propose a new cache architecture to mitigate this problem of droop and make the write operation successful. Instead of continuously writing the entire cache line (512-bit) in a single bank, the proposed architecture writes 64-bits in multiple physically separated locations across the cache. The simulation results obtained (both circuit and micro-architectural) comparing our proposed architecture against the conventional are found to be 1.96% (IPC) and 5.21% (energy).

Original languageEnglish (US)
Title of host publicationProceedings of the 2017 Design, Automation and Test in Europe, DATE 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages262-265
Number of pages4
ISBN (Electronic)9783981537093
DOIs
StatePublished - May 11 2017
Event20th Design, Automation and Test in Europe, DATE 2017 - Swisstech, Lausanne, Switzerland
Duration: Mar 27 2017Mar 31 2017

Publication series

NameProceedings of the 2017 Design, Automation and Test in Europe, DATE 2017

Other

Other20th Design, Automation and Test in Europe, DATE 2017
Country/TerritorySwitzerland
CitySwisstech, Lausanne
Period3/27/173/31/17

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Hardware and Architecture
  • Safety, Risk, Reliability and Quality

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