Dry and wet etching of single-crystal AlN

Keyphrases

• Phosphoric Acid 100%
• Etching Rate 100%
• Dry Etching 100%
• Wet Etching 100%
• CHF3 100%
• Silica 50%
• Inductively Coupled Plasma 50%
• Dislocation 50%
• Metal-organic Chemical Vapor Deposition (MOCVD) 50%
• Basal Plane 50%
• Activation Energy 50%
• Ammonium Hydroxide 50%
• C-plane 50%
• Reaction Limit 50%
• High Crystal Quality 50%
• Etched Surface 50%
• Liquid Formulation 50%
• High Power 50%
• Power with 50%
• Etch pits 50%

Material Science

• Aluminum Nitride 100%
• Dry Etching 100%
• Wet Etching 100%
• Single Crystal 100%
• Metal-Organic Chemical Vapor Deposition 50%
• Activation Energy 50%

Pharmacology, Toxicology and Pharmaceutical Science

• Pirenzepine 100%
• Inductively Coupled Plasma 33%
• Silicon Dioxide 33%
• Liquid Formulation 33%
• Organic Compound 33%