Abstract
A complete, fully integrated dry wafer cleaning procedure based on remote plasma processing is introduced. Included are all the steps needed to prepare a resist coated wafer following a field oxide etch for further processing. Experimental results based on surface analysis and MOS electrical measurements demonstrate its adequate performance in pre-gate oxidation cleaning. The results obtained can be viewed as a promising step toward the development of dry wafer cleaning technology with a possibly wide range of applications in silicon IC fabrication.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 409-412 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| State | Published - Dec 1990 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering