Dry development of sub-0.25 μm features patterned with 193 nm silylation resist

S. C. Palmateer; A. R. Forte; R. R. Kunz; M. W. Horn

doi:10.1116/1.580282

Dry development of sub-0.25 μm features patterned with 193 nm silylation resist

S. C. Palmateer, A. R. Forte, R. R. Kunz, M. W. Horn

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The dry development of sub-0.25 μm silylated resist features patterned at 193 nm was optimized in an oxygen plasma using a high-ion-density plasma etcher. Low pressure and low wafer temperature eliminate lateral resist loss, resulting in vertical profiles, linewidth fidelity, and large process latitudes for 0.175 μm silylated resist features.

Original language	English (US)
Pages (from-to)	1132-1136
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	14
Issue number	3
DOIs	https://doi.org/10.1116/1.580282
State	Published - 1996

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.580282

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title = "Dry development of sub-0.25 μm features patterned with 193 nm silylation resist",

abstract = "The dry development of sub-0.25 μm silylated resist features patterned at 193 nm was optimized in an oxygen plasma using a high-ion-density plasma etcher. Low pressure and low wafer temperature eliminate lateral resist loss, resulting in vertical profiles, linewidth fidelity, and large process latitudes for 0.175 μm silylated resist features.",

author = "Palmateer, {S. C.} and Forte, {A. R.} and Kunz, {R. R.} and Horn, {M. W.}",

year = "1996",

doi = "10.1116/1.580282",

language = "English (US)",

volume = "14",

pages = "1132--1136",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "3",

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AU - Palmateer, S. C.

AU - Forte, A. R.

AU - Kunz, R. R.

AU - Horn, M. W.

PY - 1996

Y1 - 1996

N2 - The dry development of sub-0.25 μm silylated resist features patterned at 193 nm was optimized in an oxygen plasma using a high-ion-density plasma etcher. Low pressure and low wafer temperature eliminate lateral resist loss, resulting in vertical profiles, linewidth fidelity, and large process latitudes for 0.175 μm silylated resist features.

AB - The dry development of sub-0.25 μm silylated resist features patterned at 193 nm was optimized in an oxygen plasma using a high-ion-density plasma etcher. Low pressure and low wafer temperature eliminate lateral resist loss, resulting in vertical profiles, linewidth fidelity, and large process latitudes for 0.175 μm silylated resist features.

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

ER -

Dry development of sub-0.25 μm features patterned with 193 nm silylation resist

Abstract

All Science Journal Classification (ASJC) codes

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