Abstract
The dry development of sub-0.25 μm silylated resist features patterned at 193 nm was optimized in an oxygen plasma using a high-ion-density plasma etcher. Low pressure and low wafer temperature eliminate lateral resist loss, resulting in vertical profiles, linewidth fidelity, and large process latitudes for 0.175 μm silylated resist features.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1132-1136 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 14 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1996 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
Fingerprint
Dive into the research topics of 'Dry development of sub-0.25 μm features patterned with 193 nm silylation resist'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver