DRY ETCHING OF ION IMPLANTED SILICON: ELECTRICAL EFFECTS

James M. Heddleson, Mark W. Horn, Stephen J. Fonash

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper we examine the effect of dry etching on p-type and ntype material implanted with 11B+ at 100 keV to doses of 1E12, 1E13, 1E14, 1E15, and 1E16 cm-2. Hydrogen-containing etch chemistries and typical etch parameters are simulated by Ion Beam Etching with 100% deuterium. We show that tor deuteratlon of 1E12 and 1E13 cm-211B+ implants into p-type material, deep deactivation, as is observed for unimplanted material, Is suppressed but still observed. Oeuteration of the same low dose 11B+ implants into n-type material expose two important results. The first is that hydrogen preferentially "pairs"with boron in a compensated n-type environment. The second is that hydrogen deactivates boron acceptors not only in the absence of free holes but even when the Fermi level is near the conduction band edge.

Original languageEnglish (US)
Title of host publicationSemiconductor Fabrication
Subtitle of host publicationTechnology and Metrology
EditorsDinesh C. Gupta
PublisherASTM International
Pages174-181
Number of pages8
ISBN (Electronic)9780803112735
DOIs
StatePublished - 1989
Event5th International Symposium on Semiconductor Processing - Santa Clara, United States
Duration: Feb 1 1988Feb 5 1988

Publication series

NameASTM Special Technical Publication
VolumeSTP 990
ISSN (Print)0066-0558

Conference

Conference5th International Symposium on Semiconductor Processing
Country/TerritoryUnited States
CitySanta Clara
Period2/1/882/5/88

All Science Journal Classification (ASJC) codes

  • General Materials Science

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