@inproceedings{517b741a9e0140ab9a91b561e1bb84f4,
title = "DRY ETCHING OF ION IMPLANTED SILICON: ELECTRICAL EFFECTS",
abstract = "In this paper we examine the effect of dry etching on p-type and ntype material implanted with 11B+ at 100 keV to doses of 1E12, 1E13, 1E14, 1E15, and 1E16 cm-2. Hydrogen-containing etch chemistries and typical etch parameters are simulated by Ion Beam Etching with 100% deuterium. We show that tor deuteratlon of 1E12 and 1E13 cm-211B+ implants into p-type material, deep deactivation, as is observed for unimplanted material, Is suppressed but still observed. Oeuteration of the same low dose 11B+ implants into n-type material expose two important results. The first is that hydrogen preferentially {"}pairs{"}with boron in a compensated n-type environment. The second is that hydrogen deactivates boron acceptors not only in the absence of free holes but even when the Fermi level is near the conduction band edge.",
author = "Heddleson, {James M.} and Horn, {Mark W.} and Fonash, {Stephen J.}",
note = "Publisher Copyright: {\textcopyright} 1989 by ASTM International.; 5th International Symposium on Semiconductor Processing ; Conference date: 01-02-1988 Through 05-02-1988",
year = "1989",
doi = "10.1520/STP26037S",
language = "English (US)",
series = "ASTM Special Technical Publication",
publisher = "ASTM International",
pages = "174--181",
editor = "Gupta, {Dinesh C.}",
booktitle = "Semiconductor Fabrication",
}