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Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates

  • Sarah M. Eichfeld
  • , Dongjin Won
  • , Kathy Trumbull
  • , Michael Labella
  • , Xiaojun Weng
  • , Joshua Robinson
  • , David Snyder
  • , Joan M. Redwing
  • , Tanya Paskova
  • , Kevin Udwary
  • , Greg Mulholland
  • , Ed Preble
  • , Keith R. Evans

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Material Science