Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates
- Sarah M. Eichfeld
- , Dongjin Won
- , Kathy Trumbull
- , Michael Labella
- , Xiaojun Weng
- , Joshua Robinson
- , David Snyder
- , Joan M. Redwing
- , Tanya Paskova
- , Kevin Udwary
- , Greg Mulholland
- , Ed Preble
- , Keith R. Evans
Research output: Contribution to journal › Article › peer-review
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