Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6V 32nm LP SRAM

Yih Wang; Eric Karl; Mesut Meterelliyoz; Fatih Hamzaoglu; Yong Gee Ng; Swaroop Ghosh; Liqiong Wei; Uddalak Bhattacharya; Kevin Zhang

doi:10.1109/IEDM.2011.6131655

Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6V 32nm LP SRAM

Yih Wang, Eric Karl, Mesut Meterelliyoz, Fatih Hamzaoglu, Yong Gee Ng, Swaroop Ghosh, Liqiong Wei, Uddalak Bhattacharya, Kevin Zhang

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Scopus citations

Abstract

A novel transient voltage collapse (TVC) technique is presented to enable low-voltage operation in SRAM. By dynamically switching off the PMOS during write operations with a collapsed supply voltage below the data retention voltage, a minimum operating voltage (V _ccmin) of 0.6V is demonstrated in a 32nm 12-Mb low-power (LP) SRAM. Data retention failure of unselected cells is mitigated by controlling the duration of voltage collapse. Circuit-process co-optimization is critical to ensure robust circuit design margin of TVC technique.

Original language	English (US)
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
DOIs	https://doi.org/10.1109/IEDM.2011.6131655
State	Published - Dec 1 2011
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: Dec 5 2011 → Dec 7 2011

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/Territory	United States
City	Washington, DC
Period	12/5/11 → 12/7/11

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2011.6131655

Cite this

Wang, Y., Karl, E., Meterelliyoz, M., Hamzaoglu, F., Ng, Y. G., Ghosh, S., Wei, L., Bhattacharya, U., & Zhang, K. (2011). Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6V 32nm LP SRAM. In 2011 International Electron Devices Meeting, IEDM 2011 Article 6131655 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131655

@inproceedings{4b0388dd2c914034981633218ce339fd,

title = "Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6V 32nm LP SRAM",

abstract = "A novel transient voltage collapse (TVC) technique is presented to enable low-voltage operation in SRAM. By dynamically switching off the PMOS during write operations with a collapsed supply voltage below the data retention voltage, a minimum operating voltage (V ccmin) of 0.6V is demonstrated in a 32nm 12-Mb low-power (LP) SRAM. Data retention failure of unselected cells is mitigated by controlling the duration of voltage collapse. Circuit-process co-optimization is critical to ensure robust circuit design margin of TVC technique.",

author = "Yih Wang and Eric Karl and Mesut Meterelliyoz and Fatih Hamzaoglu and Ng, {Yong Gee} and Swaroop Ghosh and Liqiong Wei and Uddalak Bhattacharya and Kevin Zhang",

year = "2011",

month = dec,

day = "1",

doi = "10.1109/IEDM.2011.6131655",

language = "English (US)",

isbn = "9781457705052",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2011 International Electron Devices Meeting, IEDM 2011",

note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",

}

Wang, Y, Karl, E, Meterelliyoz, M, Hamzaoglu, F, Ng, YG, Ghosh, S, Wei, L, Bhattacharya, U & Zhang, K 2011, Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6V 32nm LP SRAM. in 2011 International Electron Devices Meeting, IEDM 2011., 6131655, Technical Digest - International Electron Devices Meeting, IEDM, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 12/5/11. https://doi.org/10.1109/IEDM.2011.6131655

Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6V 32nm LP SRAM. / Wang, Yih; Karl, Eric; Meterelliyoz, Mesut et al.
2011 International Electron Devices Meeting, IEDM 2011. 2011. 6131655 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6V 32nm LP SRAM

AU - Wang, Yih

AU - Karl, Eric

AU - Meterelliyoz, Mesut

AU - Hamzaoglu, Fatih

AU - Ng, Yong Gee

AU - Ghosh, Swaroop

AU - Wei, Liqiong

AU - Bhattacharya, Uddalak

AU - Zhang, Kevin

PY - 2011/12/1

Y1 - 2011/12/1

N2 - A novel transient voltage collapse (TVC) technique is presented to enable low-voltage operation in SRAM. By dynamically switching off the PMOS during write operations with a collapsed supply voltage below the data retention voltage, a minimum operating voltage (V ccmin) of 0.6V is demonstrated in a 32nm 12-Mb low-power (LP) SRAM. Data retention failure of unselected cells is mitigated by controlling the duration of voltage collapse. Circuit-process co-optimization is critical to ensure robust circuit design margin of TVC technique.

AB - A novel transient voltage collapse (TVC) technique is presented to enable low-voltage operation in SRAM. By dynamically switching off the PMOS during write operations with a collapsed supply voltage below the data retention voltage, a minimum operating voltage (V ccmin) of 0.6V is demonstrated in a 32nm 12-Mb low-power (LP) SRAM. Data retention failure of unselected cells is mitigated by controlling the duration of voltage collapse. Circuit-process co-optimization is critical to ensure robust circuit design margin of TVC technique.

UR - http://www.scopus.com/inward/record.url?scp=84863046376&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863046376&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2011.6131655

DO - 10.1109/IEDM.2011.6131655

M3 - Conference contribution

AN - SCOPUS:84863046376

SN - 9781457705052

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2011 International Electron Devices Meeting, IEDM 2011

T2 - 2011 IEEE International Electron Devices Meeting, IEDM 2011

Y2 - 5 December 2011 through 7 December 2011

ER -

Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6V 32nm LP SRAM

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this