Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6V 32nm LP SRAM

Yih Wang; Eric Karl; Mesut Meterelliyoz; Fatih Hamzaoglu; Yong Gee Ng; Swaroop Ghosh; Liqiong Wei; Uddalak Bhattacharya; Kevin Zhang

doi:10.1109/IEDM.2011.6131655

Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6V 32nm LP SRAM

Yih Wang
, Eric Karl
, Mesut Meterelliyoz
, Fatih Hamzaoglu
, Yong Gee Ng
, Swaroop Ghosh
, Liqiong Wei
, Uddalak Bhattacharya
, Kevin Zhang

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Scopus citations

Abstract

A novel transient voltage collapse (TVC) technique is presented to enable low-voltage operation in SRAM. By dynamically switching off the PMOS during write operations with a collapsed supply voltage below the data retention voltage, a minimum operating voltage (V _ccmin) of 0.6V is demonstrated in a 32nm 12-Mb low-power (LP) SRAM. Data retention failure of unselected cells is mitigated by controlling the duration of voltage collapse. Circuit-process co-optimization is critical to ensure robust circuit design margin of TVC technique.

Original language	English (US)
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
DOIs	https://doi.org/10.1109/IEDM.2011.6131655
State	Published - Dec 1 2011
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: Dec 5 2011 → Dec 7 2011

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/Territory	United States
City	Washington, DC
Period	12/5/11 → 12/7/11

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2011.6131655

Cite this

Wang, Y., Karl, E., Meterelliyoz, M., Hamzaoglu, F., Ng, Y. G., Ghosh, S., Wei, L., Bhattacharya, U., & Zhang, K. (2011). Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6V 32nm LP SRAM. In 2011 International Electron Devices Meeting, IEDM 2011 Article 6131655 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131655

@inproceedings{4b0388dd2c914034981633218ce339fd,

title = "Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6V 32nm LP SRAM",

abstract = "A novel transient voltage collapse (TVC) technique is presented to enable low-voltage operation in SRAM. By dynamically switching off the PMOS during write operations with a collapsed supply voltage below the data retention voltage, a minimum operating voltage (V ccmin) of 0.6V is demonstrated in a 32nm 12-Mb low-power (LP) SRAM. Data retention failure of unselected cells is mitigated by controlling the duration of voltage collapse. Circuit-process co-optimization is critical to ensure robust circuit design margin of TVC technique.",

author = "Yih Wang and Eric Karl and Mesut Meterelliyoz and Fatih Hamzaoglu and Ng, \{Yong Gee\} and Swaroop Ghosh and Liqiong Wei and Uddalak Bhattacharya and Kevin Zhang",

year = "2011",

month = dec,

day = "1",

doi = "10.1109/IEDM.2011.6131655",

language = "English (US)",

isbn = "9781457705052",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2011 International Electron Devices Meeting, IEDM 2011",

note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",

}

Wang, Y, Karl, E, Meterelliyoz, M, Hamzaoglu, F, Ng, YG, Ghosh, S, Wei, L, Bhattacharya, U & Zhang, K 2011, Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6V 32nm LP SRAM. in 2011 International Electron Devices Meeting, IEDM 2011., 6131655, Technical Digest - International Electron Devices Meeting, IEDM, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 12/5/11. https://doi.org/10.1109/IEDM.2011.6131655

Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6V 32nm LP SRAM. / Wang, Yih; Karl, Eric; Meterelliyoz, Mesut et al.
2011 International Electron Devices Meeting, IEDM 2011. 2011. 6131655 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6V 32nm LP SRAM

AU - Wang, Yih

AU - Karl, Eric

AU - Meterelliyoz, Mesut

AU - Hamzaoglu, Fatih

AU - Ng, Yong Gee

AU - Ghosh, Swaroop

AU - Wei, Liqiong

AU - Bhattacharya, Uddalak

AU - Zhang, Kevin

PY - 2011/12/1

Y1 - 2011/12/1

N2 - A novel transient voltage collapse (TVC) technique is presented to enable low-voltage operation in SRAM. By dynamically switching off the PMOS during write operations with a collapsed supply voltage below the data retention voltage, a minimum operating voltage (V ccmin) of 0.6V is demonstrated in a 32nm 12-Mb low-power (LP) SRAM. Data retention failure of unselected cells is mitigated by controlling the duration of voltage collapse. Circuit-process co-optimization is critical to ensure robust circuit design margin of TVC technique.

AB - A novel transient voltage collapse (TVC) technique is presented to enable low-voltage operation in SRAM. By dynamically switching off the PMOS during write operations with a collapsed supply voltage below the data retention voltage, a minimum operating voltage (V ccmin) of 0.6V is demonstrated in a 32nm 12-Mb low-power (LP) SRAM. Data retention failure of unselected cells is mitigated by controlling the duration of voltage collapse. Circuit-process co-optimization is critical to ensure robust circuit design margin of TVC technique.

UR - https://www.scopus.com/pages/publications/84863046376

UR - https://www.scopus.com/pages/publications/84863046376#tab=citedBy

U2 - 10.1109/IEDM.2011.6131655

DO - 10.1109/IEDM.2011.6131655

M3 - Conference contribution

AN - SCOPUS:84863046376

SN - 9781457705052

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2011 International Electron Devices Meeting, IEDM 2011

T2 - 2011 IEEE International Electron Devices Meeting, IEDM 2011

Y2 - 5 December 2011 through 7 December 2011

ER -

Dynamic behavior of SRAM data retention and a novel transient voltage collapse technique for 0.6V 32nm LP SRAM

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this