E′ centers and leakage currents in the gate oxides of metal oxide silicon devices

P. M. Lenahan; J. J. Mele

doi:10.1116/1.1306308

E′ centers and leakage currents in the gate oxides of metal oxide silicon devices

P. M. Lenahan, J. J. Mele

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The generation of electrically neutral E′ centers was studied. It was found that the generation of these centers is accompanied by a large monotonic increase in leakage currents and that the disappearance of these centers is accompanied by a monotonic decrease in leakage currents. Overall, the results indicate an important role for E′ centers in stress induced leakage currents.

Original language	English (US)
Pages (from-to)	2169-2173
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	4
DOIs	https://doi.org/10.1116/1.1306308
State	Published - Jul 2000

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1306308

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abstract = "The generation of electrically neutral E′ centers was studied. It was found that the generation of these centers is accompanied by a large monotonic increase in leakage currents and that the disappearance of these centers is accompanied by a monotonic decrease in leakage currents. Overall, the results indicate an important role for E′ centers in stress induced leakage currents.",

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AB - The generation of electrically neutral E′ centers was studied. It was found that the generation of these centers is accompanied by a large monotonic increase in leakage currents and that the disappearance of these centers is accompanied by a monotonic decrease in leakage currents. Overall, the results indicate an important role for E′ centers in stress induced leakage currents.

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ER -

E′ centers and leakage currents in the gate oxides of metal oxide silicon devices

Abstract

All Science Journal Classification (ASJC) codes

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