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ECR hydrogen plasma treatment of Si: defect activation under thermal anneal
C. W. Nam, S. Ashok
Engineering Science and Mechanics
Materials Research Institute (MRI)
Research output
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peer-review
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Dive into the research topics of 'ECR hydrogen plasma treatment of Si: defect activation under thermal anneal'. Together they form a unique fingerprint.
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Engineering & Materials Science
Plasmas
54%
Chemical activation
53%
Hydrogen
47%
Defects
40%
Electron cyclotron resonance
35%
Deep level transient spectroscopy
35%
Hot Temperature
28%
Paramagnetic resonance
26%
Hydrogenation
24%
Temperature
23%
Cleaning
18%
Diodes
18%
Oxygen
16%
Silicon
15%
Chemical Compounds
Deep Level Transient Spectroscopy
100%
Electron Cyclotron Resonance
93%
Drop
51%
Hydrogenation
43%
Plasma
36%
Hydrogen
30%
Dioxygen
28%
Physics & Astronomy
hydrogen plasma
67%
activation
47%
defects
33%
majority carriers
25%
hydrogenation
21%
electron cyclotron resonance
21%
Schottky diodes
20%
cleaning
19%
wafers
14%
traps
14%
hydrogen
12%
oxygen
11%
temperature
11%
silicon
10%
spectroscopy
10%