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ECR hydrogen plasma treatment of Si: defect activation under thermal anneal
C. W. Nam, S. Ashok
Engineering Science and Mechanics
Materials Research Institute (MRI)
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peer-review
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Dive into the research topics of 'ECR hydrogen plasma treatment of Si: defect activation under thermal anneal'. Together they form a unique fingerprint.
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Keyphrases
Thermal Annealing
100%
Annealing
100%
Hydrogen Plasma Treatment
100%
Low Temperature
50%
Temperature Range
50%
Atomic Hydrogen
50%
Carrier Trapping
50%
Majority Carriers
50%
Deep Level Transient Spectroscopy
50%
Schottky Diode
50%
Annealing Temperature
50%
Spectroscopic Measurement
50%
Hydrogenation
50%
Electron Cyclotron Resonance
50%
Processing Technology
50%
Silicon Processing
50%
Plasma System
50%
Si Wafer
50%
Trap Level
50%
Physics
Electron Cyclotron Resonance
100%
Hydrogen Plasma
100%
Transients
50%
Majority Carrier
50%
Schottky Diode
50%
Electron Paramagnetic Resonance
50%
Plasma System
50%