ECR hydrogen plasma treatment of Si: defect activation under thermal anneal

Keyphrases

• Thermal Annealing 100%
• Annealing 100%
• Hydrogen Plasma Treatment 100%
• Low Temperature 50%
• Temperature Range 50%
• Atomic Hydrogen 50%
• Carrier Trapping 50%
• Majority Carriers 50%
• Deep Level Transient Spectroscopy 50%
• Schottky Diode 50%
• Annealing Temperature 50%
• Spectroscopic Measurement 50%
• Hydrogenation 50%
• Electron Cyclotron Resonance 50%
• Processing Technology 50%
• Silicon Processing 50%
• Plasma System 50%
• Si Wafer 50%
• Trap Level 50%

Physics

• Electron Cyclotron Resonance 100%
• Hydrogen Plasma 100%
• Transients 50%
• Majority Carrier 50%
• Schottky Diode 50%
• Electron Paramagnetic Resonance 50%
• Plasma System 50%