@inproceedings{8ca2eab5f2244888aaa1db882991f1c7,
title = "EDMR and EPR studies of 4H SiC MOSFETs and capacitors",
abstract = "We have extended a magnetic resonance based study of MOS devices to include electrically detected magnetic resonance (EDMR) measurements of fully processed MOSFETs from three facilities as well as conventional electron paramagnetic resonance (EPR) resonance measurements on simple SiC/SiO2 structures. We find close similarity between the conventional EPR and the EDMR spectra.",
author = "Cochrane, {C. J.} and Bittel, {B. C.} and Lenahan, {P. M.} and J. Fronheiser and K. Matocha and A. Lelis",
year = "2010",
doi = "10.4028/www.scientific.net/MSF.645-648.527",
language = "English (US)",
isbn = "0878492798",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "527--530",
booktitle = "Silicon Carbide and Related Materials 2009",
note = "13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 ; Conference date: 11-10-2009 Through 16-10-2009",
}