Abstract
AlGaN/GaN high-electron mobility transistors with different Al compositions and barrier thicknesses were compared. The samples with higher Al composition and similar 2-D electron gas density showed higher gate leakage, utilizing a slant field plate gate process. By applying a gate recess etch and a slant field plate gate process, gate leakage was improved to a similar level for all the devices, and the power density and PAE were much improved.
Original language | English (US) |
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Pages (from-to) | 300-302 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 29 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2008 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering