Effect of Al composition and gate recess on power performance of AlGaN/ GaN high-electron mobility transistors

Yi Pei; R. Chu; L. Shen; N. A. Fichtenbaum; Z. Chen; D. Brown; S. Keller; S. P. Denbaars; U. K. Mishra

doi:10.1109/LED.2008.917936

Effect of Al composition and gate recess on power performance of AlGaN/ GaN high-electron mobility transistors

Yi Pei
, R. Chu
, L. Shen
, N. A. Fichtenbaum
, Z. Chen
, D. Brown
, S. Keller
, S. P. Denbaars
, U. K. Mishra

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

AlGaN/GaN high-electron mobility transistors with different Al compositions and barrier thicknesses were compared. The samples with higher Al composition and similar 2-D electron gas density showed higher gate leakage, utilizing a slant field plate gate process. By applying a gate recess etch and a slant field plate gate process, gate leakage was improved to a similar level for all the devices, and the power density and PAE were much improved.

Original language	English (US)
Pages (from-to)	300-302
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	4
DOIs	https://doi.org/10.1109/LED.2008.917936
State	Published - Apr 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2008.917936

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title = "Effect of Al composition and gate recess on power performance of AlGaN/ GaN high-electron mobility transistors",

abstract = "AlGaN/GaN high-electron mobility transistors with different Al compositions and barrier thicknesses were compared. The samples with higher Al composition and similar 2-D electron gas density showed higher gate leakage, utilizing a slant field plate gate process. By applying a gate recess etch and a slant field plate gate process, gate leakage was improved to a similar level for all the devices, and the power density and PAE were much improved.",

author = "Yi Pei and R. Chu and L. Shen and Fichtenbaum, \{N. A.\} and Z. Chen and D. Brown and S. Keller and Denbaars, \{S. P.\} and Mishra, \{U. K.\}",

note = "Funding Information: Manuscript received October 31, 2007; revised January 21, 2008. This work was supported by the Millimeter-wave Initiative for Nitride Electronics (MINE) (Program manager: Dr. H. Dietrich and Dr. P. Maki). The review of this letter was arranged by Editor J. del Alamo.",

year = "2008",

month = apr,

doi = "10.1109/LED.2008.917936",

language = "English (US)",

volume = "29",

pages = "300--302",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Effect of Al composition and gate recess on power performance of AlGaN/ GaN high-electron mobility transistors

AU - Pei, Yi

AU - Chu, R.

AU - Shen, L.

AU - Fichtenbaum, N. A.

AU - Chen, Z.

AU - Brown, D.

AU - Keller, S.

AU - Denbaars, S. P.

AU - Mishra, U. K.

N1 - Funding Information: Manuscript received October 31, 2007; revised January 21, 2008. This work was supported by the Millimeter-wave Initiative for Nitride Electronics (MINE) (Program manager: Dr. H. Dietrich and Dr. P. Maki). The review of this letter was arranged by Editor J. del Alamo.

PY - 2008/4

Y1 - 2008/4

N2 - AlGaN/GaN high-electron mobility transistors with different Al compositions and barrier thicknesses were compared. The samples with higher Al composition and similar 2-D electron gas density showed higher gate leakage, utilizing a slant field plate gate process. By applying a gate recess etch and a slant field plate gate process, gate leakage was improved to a similar level for all the devices, and the power density and PAE were much improved.

AB - AlGaN/GaN high-electron mobility transistors with different Al compositions and barrier thicknesses were compared. The samples with higher Al composition and similar 2-D electron gas density showed higher gate leakage, utilizing a slant field plate gate process. By applying a gate recess etch and a slant field plate gate process, gate leakage was improved to a similar level for all the devices, and the power density and PAE were much improved.

UR - https://www.scopus.com/pages/publications/41749121932

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DO - 10.1109/LED.2008.917936

M3 - Article

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

Effect of Al composition and gate recess on power performance of AlGaN/ GaN high-electron mobility transistors

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