Effect of argon ion implantation dose on silicon Schottky barrier characteristics

S. Ashok; H. Kräutle; H. Beneking

doi:10.1063/1.95247

Effect of argon ion implantation dose on silicon Schottky barrier characteristics

S. Ashok, H. Kräutle, H. Beneking

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Abstract

The electrical characteristics of Schottky diodes fabricated on silicon surfaces subject to low-energy (10 keV) argon ion implantation have been studied as a function of Ar⁺ ion dose. Significant changes in electrical characteristics are seen for ion doses as low as 5×10¹ ¹ cm^-2, well below the amorphization threshold dose for Si. In conjunction with the ion energy threshold established earlier for Si surface damage effects (∼25 eV), these results outline fundamental limits on the effect of ion-assisted dry etching processes on Si surface barriers.

Original language	English (US)
Pages (from-to)	431-433
Number of pages	3
Journal	Applied Physics Letters
Volume	45
Issue number	4
DOIs	https://doi.org/10.1063/1.95247
State	Published - 1984

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.95247

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title = "Effect of argon ion implantation dose on silicon Schottky barrier characteristics",

abstract = "The electrical characteristics of Schottky diodes fabricated on silicon surfaces subject to low-energy (10 keV) argon ion implantation have been studied as a function of Ar+ ion dose. Significant changes in electrical characteristics are seen for ion doses as low as 5×101 1 cm-2, well below the amorphization threshold dose for Si. In conjunction with the ion energy threshold established earlier for Si surface damage effects (∼25 eV), these results outline fundamental limits on the effect of ion-assisted dry etching processes on Si surface barriers.",

author = "S. Ashok and H. Kr{\"a}utle and H. Beneking",

year = "1984",

doi = "10.1063/1.95247",

language = "English (US)",

volume = "45",

pages = "431--433",

journal = "Applied Physics Letters",

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T1 - Effect of argon ion implantation dose on silicon Schottky barrier characteristics

AU - Ashok, S.

AU - Kräutle, H.

AU - Beneking, H.

PY - 1984

Y1 - 1984

N2 - The electrical characteristics of Schottky diodes fabricated on silicon surfaces subject to low-energy (10 keV) argon ion implantation have been studied as a function of Ar+ ion dose. Significant changes in electrical characteristics are seen for ion doses as low as 5×101 1 cm-2, well below the amorphization threshold dose for Si. In conjunction with the ion energy threshold established earlier for Si surface damage effects (∼25 eV), these results outline fundamental limits on the effect of ion-assisted dry etching processes on Si surface barriers.

AB - The electrical characteristics of Schottky diodes fabricated on silicon surfaces subject to low-energy (10 keV) argon ion implantation have been studied as a function of Ar+ ion dose. Significant changes in electrical characteristics are seen for ion doses as low as 5×101 1 cm-2, well below the amorphization threshold dose for Si. In conjunction with the ion energy threshold established earlier for Si surface damage effects (∼25 eV), these results outline fundamental limits on the effect of ion-assisted dry etching processes on Si surface barriers.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Effect of argon ion implantation dose on silicon Schottky barrier characteristics

Abstract

All Science Journal Classification (ASJC) codes

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