Electron spin resonance measurements have been made on gamma-irradiated (111) Si/SiO2 structures as a function of bias across the oxide. We observe a large change in the density of radiation-induced paramagnetic P b centers with bais. We conclude that Pb defects (trivalent silicons at the Si/SiO2 interface) account for a very large portion of the radiation-induced interface states.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)