Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface

P. M. Lenahan; P. V. Dressendorfer

doi:10.1063/1.93583

Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface

P. M. Lenahan, P. V. Dressendorfer

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132 Scopus citations

Abstract

Electron spin resonance measurements have been made on gamma-irradiated (111) Si/SiO₂ structures as a function of bias across the oxide. We observe a large change in the density of radiation-induced paramagnetic P _b centers with bais. We conclude that P_b defects (trivalent silicons at the Si/SiO₂ interface) account for a very large portion of the radiation-induced interface states.

Original language	English (US)
Pages (from-to)	542-544
Number of pages	3
Journal	Applied Physics Letters
Volume	41
Issue number	6
DOIs	https://doi.org/10.1063/1.93583
State	Published - 1982

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.93583

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title = "Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface",

abstract = "Electron spin resonance measurements have been made on gamma-irradiated (111) Si/SiO2 structures as a function of bias across the oxide. We observe a large change in the density of radiation-induced paramagnetic P b centers with bais. We conclude that Pb defects (trivalent silicons at the Si/SiO2 interface) account for a very large portion of the radiation-induced interface states.",

author = "Lenahan, {P. M.} and Dressendorfer, {P. V.}",

year = "1982",

doi = "10.1063/1.93583",

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T1 - Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface

AU - Lenahan, P. M.

AU - Dressendorfer, P. V.

PY - 1982

Y1 - 1982

N2 - Electron spin resonance measurements have been made on gamma-irradiated (111) Si/SiO2 structures as a function of bias across the oxide. We observe a large change in the density of radiation-induced paramagnetic P b centers with bais. We conclude that Pb defects (trivalent silicons at the Si/SiO2 interface) account for a very large portion of the radiation-induced interface states.

AB - Electron spin resonance measurements have been made on gamma-irradiated (111) Si/SiO2 structures as a function of bias across the oxide. We observe a large change in the density of radiation-induced paramagnetic P b centers with bais. We conclude that Pb defects (trivalent silicons at the Si/SiO2 interface) account for a very large portion of the radiation-induced interface states.

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U2 - 10.1063/1.93583

DO - 10.1063/1.93583

M3 - Article

AN - SCOPUS:20844441892

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface

Abstract

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