Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface

P. M. Lenahan; P. V. Dressendorfer

doi:10.1063/1.93583

Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface

P. M. Lenahan
, P. V. Dressendorfer

Engineering Science and Mechanics

Research output: Contribution to journal › Article › peer-review

133 Scopus citations

Abstract

Electron spin resonance measurements have been made on gamma-irradiated (111) Si/SiO₂ structures as a function of bias across the oxide. We observe a large change in the density of radiation-induced paramagnetic P _b centers with bais. We conclude that P_b defects (trivalent silicons at the Si/SiO₂ interface) account for a very large portion of the radiation-induced interface states.

Original language	English (US)
Pages (from-to)	542-544
Number of pages	3
Journal	Applied Physics Letters
Volume	41
Issue number	6
DOIs	https://doi.org/10.1063/1.93583
State	Published - 1982

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.93583

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@article{0bde479ab6ad4dab92b21f0a23b877cd,

title = "Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface",

abstract = "Electron spin resonance measurements have been made on gamma-irradiated (111) Si/SiO2 structures as a function of bias across the oxide. We observe a large change in the density of radiation-induced paramagnetic P b centers with bais. We conclude that Pb defects (trivalent silicons at the Si/SiO2 interface) account for a very large portion of the radiation-induced interface states.",

author = "Lenahan, \{P. M.\} and Dressendorfer, \{P. V.\}",

year = "1982",

doi = "10.1063/1.93583",

language = "English (US)",

volume = "41",

pages = "542--544",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

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TY - JOUR

T1 - Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface

AU - Lenahan, P. M.

AU - Dressendorfer, P. V.

PY - 1982

Y1 - 1982

N2 - Electron spin resonance measurements have been made on gamma-irradiated (111) Si/SiO2 structures as a function of bias across the oxide. We observe a large change in the density of radiation-induced paramagnetic P b centers with bais. We conclude that Pb defects (trivalent silicons at the Si/SiO2 interface) account for a very large portion of the radiation-induced interface states.

AB - Electron spin resonance measurements have been made on gamma-irradiated (111) Si/SiO2 structures as a function of bias across the oxide. We observe a large change in the density of radiation-induced paramagnetic P b centers with bais. We conclude that Pb defects (trivalent silicons at the Si/SiO2 interface) account for a very large portion of the radiation-induced interface states.

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UR - https://www.scopus.com/pages/publications/20844441892#tab=citedBy

U2 - 10.1063/1.93583

DO - 10.1063/1.93583

M3 - Article

AN - SCOPUS:20844441892

SN - 0003-6951

VL - 41

SP - 542

EP - 544

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface

Abstract

All Science Journal Classification (ASJC) codes

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