Effect of c-Si doping density on heterojunction with intrinsic thin layer (HIT) radial junction solar cells

Haoting Shen; Yu Yuwen; Xin Wang; J. Israel Ramirez; Yuanyuan V. Li; Yue Ke; Chito E. Kendrick; Nikolas J. Podraza; Thomas N. Jackson; Elizabeth C. Dickey; Theresa S. Mayer; Joan M. Redwing

doi:10.1109/PVSC.2013.6744975

Effect of c-Si doping density on heterojunction with intrinsic thin layer (HIT) radial junction solar cells

Haoting Shen, Yu Yuwen, Xin Wang, J. Israel Ramirez, Yuanyuan V. Li, Yue Ke, Chito E. Kendrick, Nikolas J. Podraza, Thomas N. Jackson, Elizabeth C. Dickey, Theresa S. Mayer, Joan M. Redwing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Radial junction Si pillar array solar cells based on the heterojunction with intrinsic thin layer (HIT) structure were fabricated from p-type crystal Si (c-Si) wafers of different doping densities. The HIT structure consisting of intrinsic/n-type hydrogenated amorphous Si (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) at low temperature (200 ^°C) was found to effectively passivate the high surface area of the p-type Si pillar arrays resulting in open circuit voltages (V_oc>0.5) comparable to that obtained on planar devices. At high c-Si doping densities (>10 ¹⁸ cm^-3), the short-circuit current density (J _sc) and energy conversion efficiency of the radial junction devices were higher than those of the planar devices demonstrating improved carrier collection in the radial junction structure.

Original language	English (US)
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2466-2469
Number of pages	4
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6744975
State	Published - 2013
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: Jun 16 2013 → Jun 21 2013

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	6/16/13 → 6/21/13

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/PVSC.2013.6744975

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Shen, H., Yuwen, Y., Wang, X., Ramirez, J. I., Li, Y. V., Ke, Y., Kendrick, C. E., Podraza, N. J., Jackson, T. N., Dickey, E. C., Mayer, T. S., & Redwing, J. M. (2013). Effect of c-Si doping density on heterojunction with intrinsic thin layer (HIT) radial junction solar cells. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 2466-2469). Article 6744975 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744975

@inproceedings{d0c5934b658d445e8633492d76b1b383,

title = "Effect of c-Si doping density on heterojunction with intrinsic thin layer (HIT) radial junction solar cells",

abstract = "Radial junction Si pillar array solar cells based on the heterojunction with intrinsic thin layer (HIT) structure were fabricated from p-type crystal Si (c-Si) wafers of different doping densities. The HIT structure consisting of intrinsic/n-type hydrogenated amorphous Si (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) at low temperature (200 °C) was found to effectively passivate the high surface area of the p-type Si pillar arrays resulting in open circuit voltages (Voc>0.5) comparable to that obtained on planar devices. At high c-Si doping densities (>10 18 cm-3), the short-circuit current density (J sc) and energy conversion efficiency of the radial junction devices were higher than those of the planar devices demonstrating improved carrier collection in the radial junction structure.",

author = "Haoting Shen and Yu Yuwen and Xin Wang and Ramirez, {J. Israel} and Li, {Yuanyuan V.} and Yue Ke and Kendrick, {Chito E.} and Podraza, {Nikolas J.} and Jackson, {Thomas N.} and Dickey, {Elizabeth C.} and Mayer, {Theresa S.} and Redwing, {Joan M.}",

year = "2013",

doi = "10.1109/PVSC.2013.6744975",

language = "English (US)",

isbn = "9781479932993",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2466--2469",

booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",

address = "United States",

}

Shen, H, Yuwen, Y, Wang, X, Ramirez, JI, Li, YV, Ke, Y, Kendrick, CE, Podraza, NJ, Jackson, TN, Dickey, EC, Mayer, TS & Redwing, JM 2013, Effect of c-Si doping density on heterojunction with intrinsic thin layer (HIT) radial junction solar cells. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744975, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2466-2469, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6744975

Effect of c-Si doping density on heterojunction with intrinsic thin layer (HIT) radial junction solar cells. / Shen, Haoting; Yuwen, Yu; Wang, Xin et al.
39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 2466-2469 6744975 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Effect of c-Si doping density on heterojunction with intrinsic thin layer (HIT) radial junction solar cells

AU - Shen, Haoting

AU - Yuwen, Yu

AU - Wang, Xin

AU - Ramirez, J. Israel

AU - Li, Yuanyuan V.

AU - Ke, Yue

AU - Kendrick, Chito E.

AU - Podraza, Nikolas J.

AU - Jackson, Thomas N.

AU - Dickey, Elizabeth C.

AU - Mayer, Theresa S.

AU - Redwing, Joan M.

PY - 2013

Y1 - 2013

N2 - Radial junction Si pillar array solar cells based on the heterojunction with intrinsic thin layer (HIT) structure were fabricated from p-type crystal Si (c-Si) wafers of different doping densities. The HIT structure consisting of intrinsic/n-type hydrogenated amorphous Si (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) at low temperature (200 °C) was found to effectively passivate the high surface area of the p-type Si pillar arrays resulting in open circuit voltages (Voc>0.5) comparable to that obtained on planar devices. At high c-Si doping densities (>10 18 cm-3), the short-circuit current density (J sc) and energy conversion efficiency of the radial junction devices were higher than those of the planar devices demonstrating improved carrier collection in the radial junction structure.

AB - Radial junction Si pillar array solar cells based on the heterojunction with intrinsic thin layer (HIT) structure were fabricated from p-type crystal Si (c-Si) wafers of different doping densities. The HIT structure consisting of intrinsic/n-type hydrogenated amorphous Si (a-Si:H) deposited by plasma-enhanced chemical vapor deposition (PECVD) at low temperature (200 °C) was found to effectively passivate the high surface area of the p-type Si pillar arrays resulting in open circuit voltages (Voc>0.5) comparable to that obtained on planar devices. At high c-Si doping densities (>10 18 cm-3), the short-circuit current density (J sc) and energy conversion efficiency of the radial junction devices were higher than those of the planar devices demonstrating improved carrier collection in the radial junction structure.

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T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 2466

EP - 2469

BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

Y2 - 16 June 2013 through 21 June 2013

ER -

Shen H, Yuwen Y, Wang X, Ramirez JI, Li YV, Ke Y et al. Effect of c-Si doping density on heterojunction with intrinsic thin layer (HIT) radial junction solar cells. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 2466-2469. 6744975. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2013.6744975

Effect of c-Si doping density on heterojunction with intrinsic thin layer (HIT) radial junction solar cells

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