Abstract
The semiconductor ZnGeN2 was grown by a vapor-liquid-solid mechanism. Ordering of the Zn-Ge sublattice with growth temperature and Zn partial pressure was investigated by powder X-ray diffraction and was found to be sensitive to the growth temperature and insensitive, over the range explored, to the Zn and NH3 partial pressures. The degree of disorder on the cation sublattice was observed to correlate with the suppression of predicted Raman peaks and the emergence of phonon density-of-states features.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 237-242 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 1493 |
| DOIs | |
| State | Published - 2013 |
| Event | 2012 MRS Fall Meeting - Boston, MA, United States Duration: Nov 25 2012 → Nov 30 2012 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering