Effect of damage by 2 MeV He ions and annealing on H c2 in MgB 2 thin films

R. Gandikota; R. K. Singh; J. Kim; B. Wilkens; N. Newman; J. M. Rowell; A. V. Pogrebnyakov; X. X. Xi; J. M. Redwing; S. Y. Xu; Q. Li; B. H. Moeckly

doi:10.1063/1.2012524

Effect of damage by 2 MeV He ions and annealing on H _c2 in MgB ₂ thin films

R. Gandikota, R. K. Singh, J. Kim, B. Wilkens, N. Newman, J. M. Rowell, A. V. Pogrebnyakov, X. X. Xi, J. M. Redwing, S. Y. Xu, Q. Li, B. H. Moeckly

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Abstract

The effect of damage induced by 2 MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity (ρ), and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity (ρ 0), and produces maxima in both H c2 ⊥ (0) and H c2 ∥ (0). Below Tc s of about 25 K, Hc2 (0) depends roughly linearly on Tc, while the anisotropy of Hc2 (0) decreases as Tc decreases. Annealing the films reproduces the Tc versus ρ 0 dependence but not the Hc2 (0) values induced by damage.

Original language	English (US)
Article number	072507
Journal	Applied Physics Letters
Volume	87
Issue number	7
DOIs	https://doi.org/10.1063/1.2012524
State	Published - Aug 15 2005

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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@article{f2591a1e4c93427092cfe713a842af91,

title = "Effect of damage by 2 MeV He ions and annealing on H c2 in MgB 2 thin films",

abstract = "The effect of damage induced by 2 MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity (ρ), and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity (ρ 0), and produces maxima in both H c2 ⊥ (0) and H c2 ∥ (0). Below Tc s of about 25 K, Hc2 (0) depends roughly linearly on Tc, while the anisotropy of Hc2 (0) decreases as Tc decreases. Annealing the films reproduces the Tc versus ρ 0 dependence but not the Hc2 (0) values induced by damage.",

author = "R. Gandikota and Singh, {R. K.} and J. Kim and B. Wilkens and N. Newman and Rowell, {J. M.} and Pogrebnyakov, {A. V.} and Xi, {X. X.} and Redwing, {J. M.} and Xu, {S. Y.} and Q. Li and Moeckly, {B. H.}",

note = "Funding Information: The work at ASU was supported by ONR under Grant No. N00014-02-1-0002. The authors acknowledge use of facilities in the Center for Solid State Science at ASU. The work at Penn State was supported by ONR under Grant Nos. N00014-00-1-0294 (X.X.X.) and N0014-01-1-0006 (J.M.Re.), and by the NSF under Grant Nos. DMR-0405502 (Q.L.), and DMR-0306746 (X.X.X. and J.M.Re.).",

year = "2005",

month = aug,

day = "15",

doi = "10.1063/1.2012524",

language = "English (US)",

volume = "87",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Effect of damage by 2 MeV He ions and annealing on H c2 in MgB 2 thin films

AU - Gandikota, R.

AU - Singh, R. K.

AU - Kim, J.

AU - Wilkens, B.

AU - Newman, N.

AU - Rowell, J. M.

AU - Pogrebnyakov, A. V.

AU - Xi, X. X.

AU - Redwing, J. M.

AU - Xu, S. Y.

AU - Li, Q.

AU - Moeckly, B. H.

N1 - Funding Information: The work at ASU was supported by ONR under Grant No. N00014-02-1-0002. The authors acknowledge use of facilities in the Center for Solid State Science at ASU. The work at Penn State was supported by ONR under Grant Nos. N00014-00-1-0294 (X.X.X.) and N0014-01-1-0006 (J.M.Re.), and by the NSF under Grant Nos. DMR-0405502 (Q.L.), and DMR-0306746 (X.X.X. and J.M.Re.).

PY - 2005/8/15

Y1 - 2005/8/15

N2 - The effect of damage induced by 2 MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity (ρ), and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity (ρ 0), and produces maxima in both H c2 ⊥ (0) and H c2 ∥ (0). Below Tc s of about 25 K, Hc2 (0) depends roughly linearly on Tc, while the anisotropy of Hc2 (0) decreases as Tc decreases. Annealing the films reproduces the Tc versus ρ 0 dependence but not the Hc2 (0) values induced by damage.

AB - The effect of damage induced by 2 MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity (ρ), and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity (ρ 0), and produces maxima in both H c2 ⊥ (0) and H c2 ∥ (0). Below Tc s of about 25 K, Hc2 (0) depends roughly linearly on Tc, while the anisotropy of Hc2 (0) decreases as Tc decreases. Annealing the films reproduces the Tc versus ρ 0 dependence but not the Hc2 (0) values induced by damage.

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DO - 10.1063/1.2012524

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VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

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ER -

Effect of damage by 2 MeV He ions and annealing on H _c2 in MgB ₂ thin films

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