Effect of illumination on the electrical characteristics of AlGaN/GaN FETs

R. Dietrich; A. Vescan; A. Wieszt; H. Leier; K. S. Boutros; Joan Marie Redwing; K. Kornitzer; R. Freitag; T. Ebner; K. Thonke

doi:10.1002/(SICI)1521-396X(199911)176:1<209::AID-PSSA209>3.0.CO;2-Q

Effect of illumination on the electrical characteristics of AlGaN/GaN FETs

R. Dietrich, A. Vescan, A. Wieszt, H. Leier, K. S. Boutros, Joan Marie Redwing, K. Kornitzer, R. Freitag, T. Ebner, K. Thonke

Research output: Contribution to journal › Conference article › peer-review

13 Scopus citations

Abstract

Piezoelectric AlGaN/GaN FETs with high carrier mobility have been fabricated yielding I_DS = 450 mA/mm and g_m = 200 mS/mm. Upon turn-on of the device from the pinch-off state a significant delay in the drain current build-up is observed. This effect depends on the pinch-off time and the pinch-off voltage and can be removed by either a brief UV-illumination or a V_DS>25 V applied in on-state. The relaxation time τ of this effect is of the order of several hundred seconds. From the temperature dependence of τ an activation energy of about 280 meV and a capture cross section of 4.4×10^-18 cm² can be extracted.

Original language	English (US)
Pages (from-to)	209-212
Number of pages	4
Journal	Physica Status Solidi (A) Applied Research
Volume	176
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-396X(199911)176:1<209::AID-PSSA209>3.0.CO;2-Q
State	Published - Nov 1 1999
Event	Proceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) - Montpellier, France Duration: Jul 4 1999 → Jul 9 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/(SICI)1521-396X(199911)176:1<209::AID-PSSA209>3.0.CO;2-Q

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title = "Effect of illumination on the electrical characteristics of AlGaN/GaN FETs",

abstract = "Piezoelectric AlGaN/GaN FETs with high carrier mobility have been fabricated yielding IDS = 450 mA/mm and gm = 200 mS/mm. Upon turn-on of the device from the pinch-off state a significant delay in the drain current build-up is observed. This effect depends on the pinch-off time and the pinch-off voltage and can be removed by either a brief UV-illumination or a VDS>25 V applied in on-state. The relaxation time τ of this effect is of the order of several hundred seconds. From the temperature dependence of τ an activation energy of about 280 meV and a capture cross section of 4.4×10-18 cm2 can be extracted.",

author = "R. Dietrich and A. Vescan and A. Wieszt and H. Leier and Boutros, {K. S.} and Redwing, {Joan Marie} and K. Kornitzer and R. Freitag and T. Ebner and K. Thonke",

year = "1999",

month = nov,

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doi = "10.1002/(SICI)1521-396X(199911)176:1<209::AID-PSSA209>3.0.CO;2-Q",

language = "English (US)",

volume = "176",

pages = "209--212",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "1",

note = "Proceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) ; Conference date: 04-07-1999 Through 09-07-1999",

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TY - JOUR

T1 - Effect of illumination on the electrical characteristics of AlGaN/GaN FETs

AU - Dietrich, R.

AU - Vescan, A.

AU - Wieszt, A.

AU - Leier, H.

AU - Boutros, K. S.

AU - Redwing, Joan Marie

AU - Kornitzer, K.

AU - Freitag, R.

AU - Ebner, T.

AU - Thonke, K.

PY - 1999/11/1

Y1 - 1999/11/1

N2 - Piezoelectric AlGaN/GaN FETs with high carrier mobility have been fabricated yielding IDS = 450 mA/mm and gm = 200 mS/mm. Upon turn-on of the device from the pinch-off state a significant delay in the drain current build-up is observed. This effect depends on the pinch-off time and the pinch-off voltage and can be removed by either a brief UV-illumination or a VDS>25 V applied in on-state. The relaxation time τ of this effect is of the order of several hundred seconds. From the temperature dependence of τ an activation energy of about 280 meV and a capture cross section of 4.4×10-18 cm2 can be extracted.

AB - Piezoelectric AlGaN/GaN FETs with high carrier mobility have been fabricated yielding IDS = 450 mA/mm and gm = 200 mS/mm. Upon turn-on of the device from the pinch-off state a significant delay in the drain current build-up is observed. This effect depends on the pinch-off time and the pinch-off voltage and can be removed by either a brief UV-illumination or a VDS>25 V applied in on-state. The relaxation time τ of this effect is of the order of several hundred seconds. From the temperature dependence of τ an activation energy of about 280 meV and a capture cross section of 4.4×10-18 cm2 can be extracted.

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U2 - 10.1002/(SICI)1521-396X(199911)176:1<209::AID-PSSA209>3.0.CO;2-Q

DO - 10.1002/(SICI)1521-396X(199911)176:1<209::AID-PSSA209>3.0.CO;2-Q

M3 - Conference article

AN - SCOPUS:18244430080

SN - 0031-8965

VL - 176

SP - 209

EP - 212

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 1

T2 - Proceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99)

Y2 - 4 July 1999 through 9 July 1999

ER -

Effect of illumination on the electrical characteristics of AlGaN/GaN FETs

Abstract

All Science Journal Classification (ASJC) codes

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