Effect of interfacial dislocations on ferroelectric phase stability and domain morphology in a thin film - A phase-field model

S. Y. Hu; Y. L. Li; L. Q. Chen

doi:10.1063/1.1590416

Effect of interfacial dislocations on ferroelectric phase stability and domain morphology in a thin film - A phase-field model

S. Y. Hu, Y. L. Li, L. Q. Chen

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

A phase-field model was developed for predicting domain structure evolution in a ferroelectric thin film. The micromechanical concept of eigenstrain was employed to describe the discontinuous displacement within dislocation loops on slip planes. The effect of interfacial dislocations on ferroelectric domain nucleation and growth was simulated.

Original language	English (US)
Pages (from-to)	2542-2547
Number of pages	6
Journal	Journal of Applied Physics
Volume	94
Issue number	4
DOIs	https://doi.org/10.1063/1.1590416
State	Published - Aug 15 2003

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.1590416

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abstract = "A phase-field model was developed for predicting domain structure evolution in a ferroelectric thin film. The micromechanical concept of eigenstrain was employed to describe the discontinuous displacement within dislocation loops on slip planes. The effect of interfacial dislocations on ferroelectric domain nucleation and growth was simulated.",

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Effect of interfacial dislocations on ferroelectric phase stability and domain morphology in a thin film - A phase-field model

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