Effect of Mg-doping and Fe-doping in lead zirconate titanate (PZT) thin films on electrical reliability

Dongjoo Koh, Song Won Ko, Jung In Yang, Betul Akkopru-Akgun, Susan Trolier-Mckinstry

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Uniformly acceptor doped Pb(Zr0.48Ti0.52)O3 (PZT) films with 2 mol. % Mg or Fe prepared by chemical solution deposition exhibited decreased dielectric constants and remanent polarizations relative to undoped PZT. For highly accelerated lifetime testing (HALT) at 200 °C and an electric field of 300 kV/cm in the field up direction, the HALT lifetimes (t50) for undoped, Mg-doped, and Fe-doped PZT films were shortened from 2.81 ± 0.1 to 0.21 ± 0.1 and 0.54 ± 0.04 h, respectively. Through thermally stimulated depolarization current measurement, significant V O • • electromigration was found in homogeneously Mg-doped PZT thin films, a major factor in their short HALT lifetime. Because the concentration of oxygen vacancies increases with uniform acceptor doping, the lifetime decreases. In contrast, when a thin layer of Mg-doped or Fe-doped PZT was deposited on undoped PZT or Nb-doped PZT (PNZT), the HALT lifetimes were longer than those of pure PZT or PNZT films. This confirms prior work on PNZT films with a Mn-doped top layer, demonstrating that the HALT lifetime increases for composite films when a layer with multivalent acceptors is present near the negative electrode during HALT. In that case, the compensating electrons are trapped, presumably on the multivalent acceptors, thus increasing the lifetime.

Original languageEnglish (US)
Article number174101
JournalJournal of Applied Physics
Volume132
Issue number17
DOIs
StatePublished - Nov 7 2022

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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