Effect of neutral ion beam sputtering and etching on silicon

Stephen J. Fonash; S. Ashok; Ranbir Singh

doi:10.1016/0040-6090(82)90367-4

Effect of neutral ion beam sputtering and etching on silicon

Stephen J. Fonash
, S. Ashok
, Ranbir Singh

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Anomalous rectifying behavior of metal-semiconductor diodes formed by ion beam etching and/or ion beam deposition is presented. A model is proposed, to explain the characteristics of these devices, in terms of sputter-induced damage at the surface which leads to a buried barrier in p-Si but causes the metal-n-Si barrier to be transparent to carrier flow. These results are also compared with results obtained in compound semiconductors subjected to similar treatment.

Original language	English (US)
Pages (from-to)	231-235
Number of pages	5
Journal	Thin Solid Films
Volume	90
Issue number	3
DOIs	https://doi.org/10.1016/0040-6090(82)90367-4
State	Published - Apr 23 1982

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(82)90367-4

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title = "Effect of neutral ion beam sputtering and etching on silicon",

abstract = "Anomalous rectifying behavior of metal-semiconductor diodes formed by ion beam etching and/or ion beam deposition is presented. A model is proposed, to explain the characteristics of these devices, in terms of sputter-induced damage at the surface which leads to a buried barrier in p-Si but causes the metal-n-Si barrier to be transparent to carrier flow. These results are also compared with results obtained in compound semiconductors subjected to similar treatment.",

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T1 - Effect of neutral ion beam sputtering and etching on silicon

AU - Fonash, Stephen J.

AU - Ashok, S.

AU - Singh, Ranbir

PY - 1982/4/23

Y1 - 1982/4/23

N2 - Anomalous rectifying behavior of metal-semiconductor diodes formed by ion beam etching and/or ion beam deposition is presented. A model is proposed, to explain the characteristics of these devices, in terms of sputter-induced damage at the surface which leads to a buried barrier in p-Si but causes the metal-n-Si barrier to be transparent to carrier flow. These results are also compared with results obtained in compound semiconductors subjected to similar treatment.

AB - Anomalous rectifying behavior of metal-semiconductor diodes formed by ion beam etching and/or ion beam deposition is presented. A model is proposed, to explain the characteristics of these devices, in terms of sputter-induced damage at the surface which leads to a buried barrier in p-Si but causes the metal-n-Si barrier to be transparent to carrier flow. These results are also compared with results obtained in compound semiconductors subjected to similar treatment.

UR - https://www.scopus.com/pages/publications/0019554483

UR - https://www.scopus.com/pages/publications/0019554483#tab=citedBy

U2 - 10.1016/0040-6090(82)90367-4

DO - 10.1016/0040-6090(82)90367-4

M3 - Article

AN - SCOPUS:0019554483

SN - 0040-6090

VL - 90

SP - 231

EP - 235

JO - Thin Solid Films

JF - Thin Solid Films

IS - 3

ER -

Effect of neutral ion beam sputtering and etching on silicon

Abstract

All Science Journal Classification (ASJC) codes

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