Effect of nitridation on the reliability of thick gate oxides

C. T. Wu, A. Mieckowski, R. S. Ridley, G. Dolny, T. Grebs, J. Linn, J. Ruzyllo

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


In this work the effect of nitridation on the reliability of thick (60 nm) gate oxides used in discrete power MOSFETs is investigated. Nitridation was carried out by post-oxidation anneal in N2O at 1000 °C. Secondary ion mass spectroscopy characterization did show that the nitrogen resulting from N2O nitridation piles up in the oxide at the Si-SiO2 interface regardless of nitridation time. The results obtained show improved breakdown field (Ebd), and charge-to-breakdown (Qbd) characteristics for nitrided thick oxides. Also, lower mid-bandgap interface trap density (Dit) was observed in the case of nitrided oxides. Key conclusion from this experiment is that nitridation of thick (>50 nm) gate oxide performed to suppress boron penetration into the MOSFET channel region is not having an adverse effect on its electrical characteristics.

Original languageEnglish (US)
Pages (from-to)43-47
Number of pages5
JournalMicroelectronics Reliability
Issue number1
StatePublished - Jan 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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