Effect of polarity on Ni/InN interfacial reactions

K. C. Kragh-Buetow; X. Weng; E. D. Readinger; M. Wraback; S. E. Mohney

doi:10.1063/1.4781768

Effect of polarity on Ni/InN interfacial reactions

K. C. Kragh-Buetow
, X. Weng
, E. D. Readinger
, M. Wraback
, S. E. Mohney

Research output: Contribution to journal › Article › peer-review

Abstract

Ni films on (0001) and (000 1 ̄) InN exhibited different reaction kinetics upon annealing at 673K. Structural and chemical analysis using grazing incidence X-ray diffraction, transmission electron microscopy, and X-ray energy dispersive spectrometry indicated that an interfacial reaction did not occur between the Ni film and the In-polar (0001) InN layer. However, the N-polar face reacted with Ni to form the Ni₃InN_x ternary phase with an anti-perovskite structure. The difference in reactivity for Ni on In-face and N-face InN indicates that polarity alters the reaction and may also affect interactions between other metals and group III-nitride semiconductors.

Original language	English (US)
Article number	021607
Journal	Applied Physics Letters
Volume	102
Issue number	2
DOIs	https://doi.org/10.1063/1.4781768
State	Published - Jan 14 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4781768

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title = "Effect of polarity on Ni/InN interfacial reactions",

abstract = "Ni films on (0001) and (000 1{\= }) InN exhibited different reaction kinetics upon annealing at 673K. Structural and chemical analysis using grazing incidence X-ray diffraction, transmission electron microscopy, and X-ray energy dispersive spectrometry indicated that an interfacial reaction did not occur between the Ni film and the In-polar (0001) InN layer. However, the N-polar face reacted with Ni to form the Ni3InNx ternary phase with an anti-perovskite structure. The difference in reactivity for Ni on In-face and N-face InN indicates that polarity alters the reaction and may also affect interactions between other metals and group III-nitride semiconductors.",

author = "Kragh-Buetow, \{K. C.\} and X. Weng and Readinger, \{E. D.\} and M. Wraback and Mohney, \{S. E.\}",

note = "Funding Information: Gratitude is expressed to Jillian Woolridge for assistance with translating literature from German, and Nichole Wonderling for assistance with X-ray diffraction. K. C. Kragh-Buetow appreciates funding from the 3M Corporation and NASA.",

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doi = "10.1063/1.4781768",

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T1 - Effect of polarity on Ni/InN interfacial reactions

AU - Kragh-Buetow, K. C.

AU - Weng, X.

AU - Readinger, E. D.

AU - Wraback, M.

AU - Mohney, S. E.

N1 - Funding Information: Gratitude is expressed to Jillian Woolridge for assistance with translating literature from German, and Nichole Wonderling for assistance with X-ray diffraction. K. C. Kragh-Buetow appreciates funding from the 3M Corporation and NASA.

PY - 2013/1/14

Y1 - 2013/1/14

N2 - Ni films on (0001) and (000 1 ̄) InN exhibited different reaction kinetics upon annealing at 673K. Structural and chemical analysis using grazing incidence X-ray diffraction, transmission electron microscopy, and X-ray energy dispersive spectrometry indicated that an interfacial reaction did not occur between the Ni film and the In-polar (0001) InN layer. However, the N-polar face reacted with Ni to form the Ni3InNx ternary phase with an anti-perovskite structure. The difference in reactivity for Ni on In-face and N-face InN indicates that polarity alters the reaction and may also affect interactions between other metals and group III-nitride semiconductors.

AB - Ni films on (0001) and (000 1 ̄) InN exhibited different reaction kinetics upon annealing at 673K. Structural and chemical analysis using grazing incidence X-ray diffraction, transmission electron microscopy, and X-ray energy dispersive spectrometry indicated that an interfacial reaction did not occur between the Ni film and the In-polar (0001) InN layer. However, the N-polar face reacted with Ni to form the Ni3InNx ternary phase with an anti-perovskite structure. The difference in reactivity for Ni on In-face and N-face InN indicates that polarity alters the reaction and may also affect interactions between other metals and group III-nitride semiconductors.

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Effect of polarity on Ni/InN interfacial reactions

Abstract

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