TY - JOUR
T1 - Effect of postdeposition anneals on the Fermi level response of HfO 2/In0.53Ga0.47 As gate stacks
AU - Hwang, Yoontae
AU - Engel-Herbert, Roman
AU - Rudawski, Nicholas G.
AU - Stemmer, Susanne
N1 - Funding Information:
The research was funded by the Semiconductor Research Corporation through the Nonclassical CMOS Research Center (Task ID 1437.005). This work made use of the UCSB Nanofabrication Facility, a part of the NSF-funded NNIN network.
PY - 2010/8/1
Y1 - 2010/8/1
N2 - The electrical characteristics, in particular interface trap densities, oxide capacitance, and Fermi level movement, of metal oxide semiconductor capacitors with HfO2 gate dielectrics and In0.53Ga 0.47 As channels are investigated as a function of postdeposition annealing atmosphere. It is shown, using both conductance and Terman methods, that the Fermi level of nitrogen annealed stacks is effectively pinned at midgap. In contrast, samples annealed in forming gas show a large band bending in response to an applied gate voltage and a reduced midgap interface trap density compared to those annealed in nitrogen.
AB - The electrical characteristics, in particular interface trap densities, oxide capacitance, and Fermi level movement, of metal oxide semiconductor capacitors with HfO2 gate dielectrics and In0.53Ga 0.47 As channels are investigated as a function of postdeposition annealing atmosphere. It is shown, using both conductance and Terman methods, that the Fermi level of nitrogen annealed stacks is effectively pinned at midgap. In contrast, samples annealed in forming gas show a large band bending in response to an applied gate voltage and a reduced midgap interface trap density compared to those annealed in nitrogen.
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U2 - 10.1063/1.3465524
DO - 10.1063/1.3465524
M3 - Article
AN - SCOPUS:77955896094
SN - 0021-8979
VL - 108
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 3
M1 - 034111
ER -