Effect of postdeposition anneals on the Fermi level response of HfO 2/In0.53Ga0.47 As gate stacks

Yoontae Hwang; Roman Engel-Herbert; Nicholas G. Rudawski; Susanne Stemmer

doi:10.1063/1.3465524

Effect of postdeposition anneals on the Fermi level response of HfO ₂/In_0.53Ga_0.47 As gate stacks

Yoontae Hwang
, Roman Engel-Herbert
, Nicholas G. Rudawski
, Susanne Stemmer

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

The electrical characteristics, in particular interface trap densities, oxide capacitance, and Fermi level movement, of metal oxide semiconductor capacitors with HfO₂ gate dielectrics and In_0.53Ga _0.47 As channels are investigated as a function of postdeposition annealing atmosphere. It is shown, using both conductance and Terman methods, that the Fermi level of nitrogen annealed stacks is effectively pinned at midgap. In contrast, samples annealed in forming gas show a large band bending in response to an applied gate voltage and a reduced midgap interface trap density compared to those annealed in nitrogen.

Original language	English (US)
Article number	034111
Journal	Journal of Applied Physics
Volume	108
Issue number	3
DOIs	https://doi.org/10.1063/1.3465524
State	Published - Aug 1 2010

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.3465524

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title = "Effect of postdeposition anneals on the Fermi level response of HfO 2/In0.53Ga0.47 As gate stacks",

abstract = "The electrical characteristics, in particular interface trap densities, oxide capacitance, and Fermi level movement, of metal oxide semiconductor capacitors with HfO2 gate dielectrics and In0.53Ga 0.47 As channels are investigated as a function of postdeposition annealing atmosphere. It is shown, using both conductance and Terman methods, that the Fermi level of nitrogen annealed stacks is effectively pinned at midgap. In contrast, samples annealed in forming gas show a large band bending in response to an applied gate voltage and a reduced midgap interface trap density compared to those annealed in nitrogen.",

author = "Yoontae Hwang and Roman Engel-Herbert and Rudawski, \{Nicholas G.\} and Susanne Stemmer",

note = "Funding Information: The research was funded by the Semiconductor Research Corporation through the Nonclassical CMOS Research Center (Task ID 1437.005). This work made use of the UCSB Nanofabrication Facility, a part of the NSF-funded NNIN network.",

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doi = "10.1063/1.3465524",

language = "English (US)",

volume = "108",

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T1 - Effect of postdeposition anneals on the Fermi level response of HfO 2/In0.53Ga0.47 As gate stacks

AU - Hwang, Yoontae

AU - Engel-Herbert, Roman

AU - Rudawski, Nicholas G.

AU - Stemmer, Susanne

N1 - Funding Information: The research was funded by the Semiconductor Research Corporation through the Nonclassical CMOS Research Center (Task ID 1437.005). This work made use of the UCSB Nanofabrication Facility, a part of the NSF-funded NNIN network.

PY - 2010/8/1

Y1 - 2010/8/1

N2 - The electrical characteristics, in particular interface trap densities, oxide capacitance, and Fermi level movement, of metal oxide semiconductor capacitors with HfO2 gate dielectrics and In0.53Ga 0.47 As channels are investigated as a function of postdeposition annealing atmosphere. It is shown, using both conductance and Terman methods, that the Fermi level of nitrogen annealed stacks is effectively pinned at midgap. In contrast, samples annealed in forming gas show a large band bending in response to an applied gate voltage and a reduced midgap interface trap density compared to those annealed in nitrogen.

AB - The electrical characteristics, in particular interface trap densities, oxide capacitance, and Fermi level movement, of metal oxide semiconductor capacitors with HfO2 gate dielectrics and In0.53Ga 0.47 As channels are investigated as a function of postdeposition annealing atmosphere. It is shown, using both conductance and Terman methods, that the Fermi level of nitrogen annealed stacks is effectively pinned at midgap. In contrast, samples annealed in forming gas show a large band bending in response to an applied gate voltage and a reduced midgap interface trap density compared to those annealed in nitrogen.

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VL - 108

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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M1 - 034111

ER -

Effect of postdeposition anneals on the Fermi level response of HfO ₂/In_0.53Ga_0.47 As gate stacks

Abstract

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