Effect of residual stress on critical current density of YBa2Cu3O7-x thick films

W. Wu; M. T. Lanagan; R. B. Poeppel; B. Wang; S. Danyluk

doi:10.1016/0964-1807(94)90085-X

Effect of residual stress on critical current density of YBa₂Cu₃O_7-x thick films

W. Wu, M. T. Lanagan, R. B. Poeppel, B. Wang, S. Danyluk

Research output: Contribution to journal › Article › peer-review

Abstract

YBa₂Cu₃O_x films were fabricated on 10-cm-diameter polycrystalline MgO wafers by spray pryolysis of a metal acetate solution. In-plane residual stress of the films was obtained by shadow Moiré interferometry and correlated with crack formation and critical current density. High tensile stresses (0.96 GPa) were measured at the wafer center and decreased toward the edge, which corresponded with the largest number of cracks and lowest critical current density at the wafer center. A major cause of the residual stress (0.5 GPa) was caused by a tetragonal-to-orthorhombic phase transition in YBa₂Cu₃O_x.

Original language	English (US)
Pages (from-to)	387-390
Number of pages	4
Journal	Applied Superconductivity
Volume	2
Issue number	6
DOIs	https://doi.org/10.1016/0964-1807(94)90085-X
State	Published - Jun 1994

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.1016/0964-1807(94)90085-X

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@article{99843b9c86fb42448ea8b2988dffc172,

title = "Effect of residual stress on critical current density of YBa2Cu3O7-x thick films",

abstract = "YBa2Cu3Ox films were fabricated on 10-cm-diameter polycrystalline MgO wafers by spray pryolysis of a metal acetate solution. In-plane residual stress of the films was obtained by shadow Moir{\'e} interferometry and correlated with crack formation and critical current density. High tensile stresses (0.96 GPa) were measured at the wafer center and decreased toward the edge, which corresponded with the largest number of cracks and lowest critical current density at the wafer center. A major cause of the residual stress (0.5 GPa) was caused by a tetragonal-to-orthorhombic phase transition in YBa2Cu3Ox.",

author = "W. Wu and Lanagan, {M. T.} and Poeppel, {R. B.} and B. Wang and S. Danyluk",

note = "Funding Information: This work was supported by the U.S. Department of Energy, Energy Efficiency and Renewable Energy, as part of a program to develop electric power technology, under Contract W-31-109-Eng-38.",

year = "1994",

month = jun,

doi = "10.1016/0964-1807(94)90085-X",

language = "English (US)",

volume = "2",

pages = "387--390",

journal = "Applied Superconductivity",

issn = "0964-1807",

publisher = "Pergamon Press Ltd.",

number = "6",

}

TY - JOUR

T1 - Effect of residual stress on critical current density of YBa2Cu3O7-x thick films

AU - Wu, W.

AU - Lanagan, M. T.

AU - Poeppel, R. B.

AU - Wang, B.

AU - Danyluk, S.

N1 - Funding Information: This work was supported by the U.S. Department of Energy, Energy Efficiency and Renewable Energy, as part of a program to develop electric power technology, under Contract W-31-109-Eng-38.

PY - 1994/6

Y1 - 1994/6

N2 - YBa2Cu3Ox films were fabricated on 10-cm-diameter polycrystalline MgO wafers by spray pryolysis of a metal acetate solution. In-plane residual stress of the films was obtained by shadow Moiré interferometry and correlated with crack formation and critical current density. High tensile stresses (0.96 GPa) were measured at the wafer center and decreased toward the edge, which corresponded with the largest number of cracks and lowest critical current density at the wafer center. A major cause of the residual stress (0.5 GPa) was caused by a tetragonal-to-orthorhombic phase transition in YBa2Cu3Ox.

AB - YBa2Cu3Ox films were fabricated on 10-cm-diameter polycrystalline MgO wafers by spray pryolysis of a metal acetate solution. In-plane residual stress of the films was obtained by shadow Moiré interferometry and correlated with crack formation and critical current density. High tensile stresses (0.96 GPa) were measured at the wafer center and decreased toward the edge, which corresponded with the largest number of cracks and lowest critical current density at the wafer center. A major cause of the residual stress (0.5 GPa) was caused by a tetragonal-to-orthorhombic phase transition in YBa2Cu3Ox.

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DO - 10.1016/0964-1807(94)90085-X

M3 - Article

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SN - 0964-1807

VL - 2

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EP - 390

JO - Applied Superconductivity

JF - Applied Superconductivity

IS - 6

ER -

Effect of residual stress on critical current density of YBa₂Cu₃O_7-x thick films

Abstract

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