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Effect of rie sequence and post-rie surface processing on the reliability of gate oxide in a trench

  • T. Grebs
  • , R. Ridley
  • , K. Chang
  • , C. T. Wu
  • , R. Agarwal
  • , J. Mytych
  • , W. Dimachkié
  • , G. Dolny
  • , G. Michalowicz
  • , Jerzy Ruzyllo

Research output: Contribution to conference › Paper › peer-review

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