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Effect of rie sequence and post-rie surface processing on the reliability of gate oxide in a trench
T. Grebs, R. Ridley, K. Chang, C. T. Wu, R. Agarwal, J. Mytych, W. Dimachkié, G. Dolny, G. Michalowicz, Jerzy Ruzyllo
Research output: Contribution to conference › Paper › peer-review