Effect of sample rotation on surface roughness with keV C60 bombardment in secondary ion mass spectrometry (SIMS) experiments

Barbara J. Garrison, Zbigniew Postawa

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The simplicity of interpreting depth profiling in SIMS experiments is often limited by sample damage and surface roughness that accompany the ion bombardment process. Molecular dynamics simulations are implemented to obtain mechanistic insight into the improvement of depth profiles due to sample rotation during keV C60 bombardment of solids. The simulations show that sample rotation decreases the RMS roughness of the sample compared to a single azimuthal angle of incidence, as observed by experiment. The improvement is most noticeable for near-grazing angles of incidence. Bombardment of the sample at these angles builds up an anisotropic topology which sample rotation at least partially removes.

Original languageEnglish (US)
Pages (from-to)129-134
Number of pages6
JournalChemical Physics Letters
Volume506
Issue number4-6
DOIs
StatePublished - Apr 20 2011

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy
  • Physical and Theoretical Chemistry

Fingerprint

Dive into the research topics of 'Effect of sample rotation on surface roughness with keV C60 bombardment in secondary ion mass spectrometry (SIMS) experiments'. Together they form a unique fingerprint.

Cite this