TY - GEN
T1 - Effect of strain induced charge redistribution on Young's modulus of zinc oxide nanowires
AU - Desai, A. V.
AU - Haque, M. A.
PY - 2008
Y1 - 2008
N2 - As the size of material decreases to nanoscale, fundamental material properties such as Young's modulus are different from bulk values. In this paper, we propose a new mechanism to explain the difference in experimentally observed Young's modulus values between zinc oxide nanowires and bulk zinc oxide. As a binary compound material (such as zinc oxide) is strained, the effective charge on the ionic constituents of the material changes (in this case zinc and oxygen). The strain induced charge redistribution effect is more significant in nanostructures (such as nanowires) because of their higher fracture strains compared to their bulk counterparts. Since the Young's modulus of a material is related to the effective charge, we observe differences in modulus values between nanowires and their bulk equivalent. The strain induced charge redistribution phenomenon can also be used to explain variation in modulus values between bulk and nanoscale for other single crystal piezoelectric materials such as silicon carbide.
AB - As the size of material decreases to nanoscale, fundamental material properties such as Young's modulus are different from bulk values. In this paper, we propose a new mechanism to explain the difference in experimentally observed Young's modulus values between zinc oxide nanowires and bulk zinc oxide. As a binary compound material (such as zinc oxide) is strained, the effective charge on the ionic constituents of the material changes (in this case zinc and oxygen). The strain induced charge redistribution effect is more significant in nanostructures (such as nanowires) because of their higher fracture strains compared to their bulk counterparts. Since the Young's modulus of a material is related to the effective charge, we observe differences in modulus values between nanowires and their bulk equivalent. The strain induced charge redistribution phenomenon can also be used to explain variation in modulus values between bulk and nanoscale for other single crystal piezoelectric materials such as silicon carbide.
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U2 - 10.1115/IMECE2007-41210
DO - 10.1115/IMECE2007-41210
M3 - Conference contribution
AN - SCOPUS:44349145453
SN - 079184305X
SN - 9780791843055
T3 - ASME International Mechanical Engineering Congress and Exposition, Proceedings
SP - 1175
EP - 1180
BT - Proceedings of the ASME International Mechanical Engineering Congress and Exposition, IMECE 2007
T2 - ASME International Mechanical Engineering Congress and Exposition, IMECE 2007
Y2 - 11 November 2007 through 15 November 2007
ER -